Objective To demonstrate the effectiveness of dielectrophoresis polishing method (DPM) and the effect of the electrode shape on uniformity, efficiency and to investigate the removal rate. Methods The 76. 2 mm-diameter monocrystalline silicon wafer was polished by CMP and DPM. The surface roughness of different positions on wafer and quality of wafer were measured every 30 minutes. The measured values were processed and analyzed. Results Compared with CMP, the difference of surface roughness between different positions on wafer polished by DPM was less and the roughness decreased more quickly, and the difference was the least and the roughness decreased in the fastest speed when the circle electrode of 60 mm in diameter was used. The removal rate of DPM was enhanced by 11. 0% ~19. 5% when the annulus electrode of 70 mm in inner diameter and 90 mm in external diameter was used. Conclusion The uniformity, efficiency and removal rate of DPM were superior to CMP.