Bismuth ferrite is the only single phase multiferroic material at room temperature. It has broad application prospects in the fields of optoelectronic devices, spin electric devices, ferroelectric random access memories, magnetoelectric memory because of its narrow band gap, large remnant polarization and high ferroelectric Curie temperature. However, the practical application of bismuth ferrite thin films is largely limited due to high leakage current and weak magnetic coupling. Ion doping is the most popular method because of its simplicity, easy to adjust microstructure and properties. This paper reviewed the research progress in doping modification of the electrical properties of bismuth ferrite thin films in recent years and the different types of doping, including A-site (trivalent Lanthanides and divalent alkali ions), B-site ( such as transition metals) and A-B sites co-doping. The elements in A-site and B-site doping were clarified based on the effects of doping on the leakage current, ferroelectricity and remnant polarization of bismuth ferrite films. And the effects and mechanisms of various types of doping were systemically summarized. Finally, some urgent questions to be promptly solved were raised.