Objective To explore the pattern between the crystallization of TiO2 thin films and the process parameters. Methods The process conditions (the position of the sample, sputtering power, oxygen partial pressure, the bogie, deposition temperature and annealing) were modified by the DC reactive magnetron sputtering method to prepare TiO2 thin films on the common slide glass substrate. TiO2 thin films under different process parameters were analyzed by XRD and SEM. Results In the case of fixed targetsubstrate distance, simply changing the sample suspension position had little influence on thin-film crystalline. As the sputtering power increased within a certain range, the film crystalline became better and better (tending to anatase crystal). Crystalline of the thin film whose oxygen partial pressure was 10% was better than that whose pressure was 5% . The thin film crystalline was superior when the turntable was not opened, compared to when the turntable was opened. Deposition temperature (shifting between 300 ℃ and 350 ℃) made no difference to thin film crystalline. Crystalline of thin film annealed was superior to that not annealed. Conclusion Sample suspension position and deposition temperature have little effect on the crystalline property of TiO2 films. Oxygen partial pressure and opening of turntable have some impacts on the crystalline property of TiO2 films. Sputtering power and annealing have a greater influence on the crystallization of TiO2 thin film, the rutile crystal diffraction peaks appear after being annealed.