目的 研究纳米金刚石薄膜生长掺硼的内在机理,实现对该过程的精确控制。 方法 采用微波等离子体化学气相沉积法,以氢气稀释的乙硼烷为硼源,进行纳米金刚石薄膜的生长过程掺硼实验,研究硼源浓度对掺硼纳米金刚石薄膜晶粒尺寸、表面粗糙度、表面电阻和表面硼原子浓度的影响。 结果 随着硼源浓度的增加,纳米金刚石薄膜的表面粗糙度和晶粒尺寸增大,表面电阻则先下降,而后趋于平衡。结论 纳米金刚石薄膜掺硼后,表面电导性能可获得改善,表面粗糙度和晶粒尺寸则会增大。 在 700 ℃条件下掺硼 15 min,最佳的硼源浓度( 以硼烷占总气体流量的百分比计) 为 0 . 02% 。

Objective In order to study the intrinsic mechanism of doping borane during the growth of nano-crystalline diamond films to achieve precise control of the process. Methods Nano-crystalline diamond ( NCD) films were boron doped by the microwave plasma enhanced chemical vapor deposition ( MPCVD) method using hydrogen diluted di-borane as boron source. The influences of borane concentration on grain size, surface roughness, surface resistance and boron atom concentration of boron-doped NCD films were investigated. Results The surface roughness and grain size of nanocrystalline diamond films increased with increasing concentrations of boron source. The surface resistance first showed a downward trend with increasing boron concentrations, and then gradually reached equilibrium. Conclusion The results showed that doping of boron could improve the surface conductivity performance of nano-crystalline diamond films and increase its surface roughness and grain size. By comprehensive comparison, the optimal borane concentration was 0. 02% under the doping condition of 700 ℃ and 15 min.