利用直流磁控溅射技术在单晶 Si( 110 ) 基底上制备 Mo 薄膜,分析了工作气压对沉积速率、表面质量及微观结构的影响。 结果表明:薄膜的沉积速率随压强的增大而增加;低气压下沉积的 Mo 薄膜表面质量较好且结构致密,高气压下沉积的 Mo 薄膜表面质量较差且结构疏松;在工作气压为 0 . 8 Pa 时,制备的 Mo 薄膜晶粒尺寸与微观应力值最小。

Mo films were successfully deposited by DC magnetron sputtering on Si substrates. The influences of deposition rate, surface tomograph and microstructure were analyzed. The results show that deposition rate increases with pressure.The film sputtered at low pressure has good crystallization and exhibites dense structure. Under high pressure conditions, the film exhibites bad crystallization and loose structure. At the pressure of 0 . 8 Pa, the film has lowest value of crysize and microstrain.