采用纯化学处理的方法,在 NiTi 形状记忆合金表面沉积羟基磷灰石膜层,探讨了在钙化初期引入电脉冲对膜层的影响,分析了钙化液组分浓度以及脉冲参数对膜层生长的响应规律。 结果表明:含 Ca²⁺3 . 10mmol / L,K⁺4 . 64 mmol / L,Na⁺126 . 8 mmol / L,Cl^-144 . 5 mmol / L 及 HPO₄^2-1 . 86 mmol / L,且呈弱碱性的钙化液最适合钙磷层的生长,采用此钙化液,经适当处理后,试样表面生成了疏松、多孔的钙磷层,经检测,钙磷层为羟基磷灰石和其它钙磷盐的混合物;电脉冲的引入可在一定程度上加速钙磷层的沉积,并提高羟基磷灰石膜的纯度。

The experiment adopted chemical technology to deposit apatite layer on the surface of NiTi shape memory alloy , and the influence of the calcification treatment to the apatite layer under bringing in the electric pulse modification was discussed , and the respond mechanisms of component concentrations of calcification solution and pulse parameter to the film grown were analyzed. The experimental results indicated that when the consistence of calcification solution was Ca²⁺3 . 10 mmol / L, K⁺4 . 64 mmol / L, Na⁺126 . 8 mmol / L, Cl^-144 . 5 mmol / L, HPO₄^2-1 . 86 mmol / L and the solution was alkalescent, the quality of apatite layer was best; After applying for the calcification solution and the appropriately treated, there was a loose and porous apatite layer on the surface of the sample, it was admixture of hydroxyapatite ( HA) and other calcium phosphorus salt; Electric pulse modification was beneficial to deposition of apatite layer and enhanced the purity of hydroxyapatite.