基于单晶硅材料,通过阳极电化学腐蚀法制得多孔硅材料,通过湿化学刻蚀法制得硅纳米线材料,经过空气等离子体氧化处理后,采用扫描电子显微镜、傅里叶红外光谱仪对样品的化学组分以及表面微观结构进行了表征。最后对多孔硅和硅纳米线材料的减反效果进行对比,结果表明,硅纳米线具有更优越的减反效果。

By anode electrochemical etching or wet chemical etching, porous silicon and silicon nanowires were prepared, respectively. After oxidation by air plasma, these two samples were characterized by scanning electron microscope, infrared spectrum. Finally, the antireflection effect of porous silicon and silicon nanowires were measured, which indicated silicon nanowires had better anti-reflection effect.