利用能量过滤磁控溅射技术,于低温条件下,在玻璃衬底上制备ITO 薄膜,研究了过滤电极金属网栅目数、溅射功率、衬底温度对ITO 薄膜光电性能的影响。结果表明:在网栅目数为60目、衬底温度为81℃、溅射功率为165W 的条件下,所得ITO 薄膜的电阻率为4.9×10-4 Ω·cm,可见光区平均透过率达到87%。

The indium tin oxide(ITO)thin films were deposited on glass substrates by energy filtering magnetron sputtering(EFMS)at low temperature. The effects of different filtering electrode mesh, sputtering power and the temperature of the substrates on the photoelectric properties of ITO films were studied. The results show that we can received the ITO thin films have a resistivity of 4.9×10-4 Ω·cm and transparency of 87% in the visible wavelength region, when the mesh of filtering electrode for 60 mesh, the temperature of the substrates for 81℃ and sputtering power for 165 W.