采用W70Cu30单靶磁控溅射与纯W、纯Cu双靶磁控共溅两种工艺,在多种基材上制备W-Cu薄膜,分析了薄膜的宏观形貌和组织结构。分析结果表明:单靶磁控溅射时,控制靶电压520V,溅射电流0.8~1.2A,Ar气流量25mL/min(标准状态),可在玻璃基体上镀得W-Cu薄膜,但退火时如温度过高,会使W 和Cu两种元素原子偏聚加重;双靶磁控溅射时,控制Ar气流量20mL/min(标准状态),Cu靶电流0.7A,W 靶电流1.2A,溅射时间3600s,可在硅基和玻璃基上镀得W-Cu薄膜,但在石墨基体、陶瓷基体及45钢基体上的镀膜效果不理想。

W-Cu films were prepared on a variety of substrate by single target magnetron sputtering of W70Cu30 and pure W, pure Cu dual-target magnetron co-sputtering two processes.The results show that when use the single target magnetron sputtering, the control target voltage is 520 V, sputtering current is 0.8~1.2 A, the gas flow of Ar is 25mL/min(standard state), the W-Cu film can be plated on a glass substrate. The annealing temperature is too high can also increase W and Cu atom segregation. With dual-target magnetron co-sputtering, the control Ar gas flow rate is 20 mL/min(standard state), Cu target current is 0.7 A, W target current is 1.2 A, sputtering time is 3600 s, W-Cu thin films are plated on the silicon and glass substrates, but the result is not ideal in the coating on the graphite matrix, ce-ramic matrix, and 45 steel substrate.