目的 通过化学机械抛光（CMP）手段获得熔融石英的超光滑表面。方法 针对既有有限元研究中对抛光液润滑与承载效应考虑不足的问题,引入流-固耦合建模思路,采用ABAQUS/Explicit的欧拉-拉格朗日耦合方法,分析CMP过程力学行为。配制由CeO2、阿拉伯树胶、γ-氨基丁酸和去离子水组成的抛光液,并通过单因素试验研究磨粒浓度、pH值与抛光压力对材料去除率（MRR）和表面粗糙度（Sa）的影响,结合TEM与XPS对亚表面损伤与表面化学状态进行表征。结果 在优化条件下,样品Sa由抛光前的0.745 nm降至0.158 nm（50 μm×50 μm）,且表面无划痕与点蚀缺陷,实现表面的原子级光滑。同时,将亚表面损伤层厚度由10.7 nm降至4.1 nm。数值模拟揭示了界面应力由离散高值向连续分布演化的动态接触特征。此外,XPS结果显示,抛光后表面化学环境发生调整,Si的键合环境趋于单一且缺陷减少。所建模型与参数窗口可为熔融石英获得原子级光滑表面与降低亚表面损伤提供理论依据与工艺指导。结论 表明CMP可有效修复研磨引入的损伤并提升表面完整性。进一步结合数值模拟与表面化学表征发现,界面平均应力处于0.1~1 MPa量级,反映出接触状态由点状接触向扩展并趋于稳定的演化过程以及液膜的缓冲作用。XPS结果亦显示,抛光后Si化学环境更趋单一、缺陷减少,从力学与化学2个方面共同印证了化学调控+机械去除的协同材料去除机理。
Abstract
Fused silica is a typical hard-brittle material widely used in high-end optical and semiconductor systems, where near-atomic-scale surface quality and minimal subsurface damage (SSD) are critically required. However, conventional processing methods often induce surface defects and subsurface cracks, limiting performance. Chemical mechanical polishing (CMP) provides a promising solution, yet the underlying material removal mechanism, particularly the coupling effects among slurry flow, abrasive motion, and pad-workpiece contact, remains insufficiently understood. The work aims to achieve an atomically smooth surface on fused silica while suppressing SSD, and to clarify the removal mechanism based on fluid-solid coupling modeling and experimental validation.
To overcome the limitations of conventional finite element approaches that neglected slurry lubrication and load-bearing effects, a fluid-solid coupling model wasestablished with the Euler-Lagrange coupling method implemented in ABAQUS/Explicit. This framework enabled simultaneous characterization of fluid behavior and solid deformation during CMP. A polishing slurry consisting of CeO2 abrasives, Arabic gum, γ-aminobutyric acid, and deionized water was formulated. Single-factor experiments were conducted to systematically investigate the effects of abrasive concentration, pH value, and polishing pressure on material removal rate (MRR) and surface roughness (Sa). Furthermore, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were employed to characterize subsurface damage evolution and surface chemical states. The combination of numerical simulation and experimental characterization allowed for a multi-scale interpretation of the material removal mechanism.
Under optimized process conditions, the surface roughness (Sa) of fused silica was significantly reduced from 0.745 nm to 0.158 nm (50 μm×50 μm), achieving a near-atomic-scale (atomically smooth) surface free of scratches and pitting defects. Meanwhile, the thickness of the subsurface damage layer decreased from 10.7 nm to 4.1 nm, indicating effective suppression of SSD. The experimentally measured material removal rate showed a clear dependence on process parameters, consistent with simulation predictions. Numerical results revealed that the interfacial stress evolved dynamically from discrete localized high-stress points to a more uniform and continuous distribution, indicating a transition from point contact to stable mixed contact. The average interfacial stress was maintained within 0.1-1 MPa, demonstrating the buffering and load-carrying role of the slurry film. Additionally, XPS analysis indicated that the surface chemical environment became more homogeneous after polishing, with reduced defect states and a more uniform Si bonding configuration. These results collectively confirmed that the CMP process wasgoverned by a synergistic material removal mechanism, involving chemically induced surface modification and mechanically assisted removal.
This work establishes a robust Euler-Lagrange-based fluid-solid coupling framework for analyzing the CMP process of fused silica and provides direct experimental validation of its predictive capability. The results demonstrate that achieving an optimal balance between hydrodynamic lubrication and mechanical contact is essential for realizing high-efficiency material removal, atomically smooth surfaces, and reduced subsurface damage. The combined numerical-experimental approach clarifies the material removal mechanism from both mechanical and chemical perspectives, revealing the critical role of stress distribution evolution and surface chemical regulation. The proposed model and optimized process window provide theoretical guidance and practical strategies for ultra-precision polishing of hard-brittle materials, enabling deterministic control of surface integrity in advanced optical manufacturing.
关键词
化学机械抛光 /
熔融石英 /
流-固耦合建模 /
欧拉-拉格朗日耦合方法 /
亚表面损伤 /
原子级光滑表面 /
材料去除机理
Key words
chemical mechanical polishing /
fused silica /
fluid-solid coupling modeling /
euler-Lagrange coupling method /
subsurface damage /
atomically smooth surface /
material removal mechanism
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