目的 针对亚毫米级硅微球在加工过程中圆度收敛慢、表面质量控制难的问题,需开展V槽与平盘组合的双偏心式研磨方法和关键加工参数对研磨效果影响规律的研究。实现硅微球高效超精密研磨加工。方法 首先,建立硅微球双偏心式研磨运动学模型,通过MATLAB仿真分析不同加工方式及偏心距对研磨轨迹均匀性的影响。其次,以直径0.9 mm硅微球为研究对象,通过单因素实验探究磨料浓度、研磨压力、磨料粒径及上下盘转速对圆度、表面粗糙度及材料去除率的影响规律。最后,基于实验规律,制定“粗研-半精研-精研”的分阶段研磨工艺并进行实验验证。结果 仿真分析表明,双偏心结构比同心和单偏心结构具有更好的轨迹包络均匀性,且在上下盘偏心距1 mm、V槽偏心距2 mm时最佳;实验结果表明,圆度与表面粗糙度随磨料浓度、研磨压力及上下盘转速的增加均呈现先减小后增大的趋势;增大磨料粒径有利于圆度快速收敛,但会导致表面粗糙度升高;材料去除率随研磨压力、上下盘转速及磨料粒径的增大而显著提升,但在高磨料浓度下趋于饱和;经分阶段工艺加工后,硅微球平均圆度由1.849 μm收敛至0.432 μm,表面粗糙度由23.651 nm降低至6.632 nm。结论 双偏心研磨方式可针对亚毫米级硅微球加工轨迹获得均匀全包络覆盖,分阶段研磨工艺可以在快速收敛圆度的同时保证表面质量。此研究成果可为亚毫米级硅微球的超精密研磨加工提供可行技术方案。
Abstract
High-precision sub-millimeter silicon microspheres are critical components in fields such as micro-bearings, MEMS devices, and optical instruments. However, due to their extremely low mass and small moment of inertia, these microspheres are prone to slippage, rotation stagnation, and uneven wear during traditional concentric V-groove lapping. These issues will severely hinder the convergence of roundness and the control of surface quality. To address these challenges, the work aims to propose a novel dual-eccentric ultra-precision lapping method utilizing a combination of a V-groove and a flat plate. The primary objective is to clarify the effect laws of key process parameters on the lapping mechanism and to achieve high-efficiency, ultra-precision batch machining. Initially, based on the principles of spatial meshing and rigid body kinematics, a geometric kinematic model of the microsphere under a dual-eccentric field was established. To quantitatively evaluate the uniformity of the lapping trajectory, the spherical surface was discretized, and the Standard Deviation (DS) of the trajectory point distribution density was introduced as a key evaluation index. MATLAB simulations were conducted to systematically analyze and compare the trajectory characteristics under concentric, single-eccentric, and dual-eccentric processing modes. The simulation results revealed that the dual-eccentric structure effectively disrupted the periodicity of the sphere's motion, creating a chaotic and ergodic trajectory that covered the entire spherical surface. Comparative analysis determined that the trajectory envelope uniformity was optimal when the upper plate eccentricity was set to 1 mm and the V-groove eccentricity was set to 2 mm. Subsequently, a dedicated experimental platform was constructed, and 0.9 mm silicon microspheres were selected as the processing objects. Single-factor experiments were performed to investigate the specific effects of abrasive concentration, lapping pressure, abrasive particle size, and rotational speeds of the upper and lower plates on three performance indicators: roundness error, surface roughness (Sa), and material removal rate (ηMRR). The experimental results indicate complex non-linear relationships. Specifically, the roundness error and surface roughness exhibited a trend of decreasing first and then increasing with the rise of abrasive concentration, lapping pressure, and rotational speeds. This suggested that while moderate parameter increases enhanced cutting efficiency, excessive pressure or speed induced vibration and motion instability, leading to surface damage and deteriorating roundness. Regarding abrasive particle size, increasing the particle size significantly improved the material removal rate, which was beneficial for rapid roundness convergence during the shaping phase, but it inevitably led to deeper scratches and increased surface roughness. Conversely, smaller particles were essential for achieving a super-smooth surface finish. Additionally, the ηMRR tended to saturate at high abrasive concentrations due to particle interference. Based on these experimental laws, a progressive "roughing, semi-finishing, and finishing" multi-stage lapping process strategy was developed. The roughing stage utilized larger abrasives and higher pressures to quickly correct geometric errors, while the finishing stage employed fine abrasives and lower pressures to remove subsurface damage and improve surface integrity. Verification experiments demonstrated that after applying this optimized multi-stage process, the average roundness of the silicon microsphere converged significantly from an initial 1.849 μm to 0.432 μm, and the surface roughness (Sa) decreased from 23.651 nm to 6.632 nm. In conclusion, the dual-eccentric lapping method can achieve uniform full envelope coverage of the machining trajectory for sub-millimeter silicon microspheres. The proposed stepwise process strategy effectively balances the conflict between machining efficiency and surface quality, providing a viable technical solution for the mass production of high-precision sub-millimeter hard and brittle microspheres.
关键词
硅微球 /
双偏心研磨 /
运动学分析 /
均匀性评价 /
研磨参数 /
加工工艺
Key words
silicon microsphere /
dual-eccentric lapping /
kinematic analysis /
uniformity evaluation /
lapping parameters /
processing technology
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基金
国家自然科学基金项目（52305518,52575238）; 四川省科技计划项目（2025ZDZX0028,2024NSFTD0019）
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