基于固相化学反应的化学机械抛光KDP晶体材料去除模型

斯佳龙, 卢骁, 李岚, 杨连通, 陈凯, 于智, 李军

表面技术 ›› 2026, Vol. 55 ›› Issue (9) : 35-43.

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表面技术 ›› 2026, Vol. 55 ›› Issue (9) : 35-43. DOI: 10.16490/j.cnki.issn.1001-3660.2026.09.004
精密与超精密加工

基于固相化学反应的化学机械抛光KDP晶体材料去除模型

  • 斯佳龙, 卢骁, 李岚, 杨连通, 陈凯, 于智, 李军*
作者信息 +

A Material Removal Model for KDP Crystal in Chemical Mechanical Polishing Based on Solid-phase Chemical Reactions

  • SI Jialong, LU Xiao, LI Lan, YANG Liantong, CHEN Kai, YU Zhi, LI Jun*
Author information +
文章历史 +

摘要

目的 磷酸二氢钾(KH2PO4,KDP)晶体是高功率激光系统和惯性约束核聚变装置中的关键光学材料。然而,KDP晶体因其易潮解、脆性大、硬度低等特性,成为最难加工的材料之一。因此,研究化学机械抛光过程中化学与机械耦合作用的复杂机制,揭示固相化学作用在材料去除中的作用机理,对于实现KDP晶体的高质量加工具有重要意义。方法 本研究采用固-固化学机械抛光技术,根据非均相固相化学反应动力学理论,研究机械作用与温度对反应速率的影响,建立固相化学反应速率模型;基于固相化学反应速率模型,结合单颗磨粒刻划理论,计算反应层厚度,建立基于固相化学反应的材料去除模型。在不同抛光压力及抛光垫转速下,开展固-固化学机械抛光KDP晶体实验,验证基于固相化学反应的材料去除模型。结果 实验结果表明,模型的理论值与实验值的误差在13%以内,验证了模型的有效性。材料去除率随抛光压力和抛光垫转速的增大而增大。结论 在固-固化学机械抛光技术中,抛光压力与抛光垫转速是影响反应活化能与温度的主要因素,从而影响固相反应速率,进而也是材料去除速率的主要影响因素。

Abstract

Potassium dihydrogen phosphate (KH2PO4, KDP) crystal is a key optical material employed in high-power laser systems and inertial confinement fusion devices. However, its hygroscopicity, brittleness, and low hardness make KDP one of the most challenging materials to machine. Therefore, investigating the complex coupling mechanisms between chemical and mechanical actions during chemical mechanical polishing, and elucidating the role of solid-phase chemistry in material removal, are of great significance for achieving high-quality processing of KDP crystals.
In this work, a fixed solid-phase chemical mechanical polishing method was utilized. Drawing on the kinetics of heterogeneous solid-phase reactions and the Arrhenius equation, the effects of mechanical action and temperature on the reaction rate were examined, and the true contact area between the KDP crystal and the reactants in the fixed abrasive pad was computed. A solid-phase chemical reaction rate model was thus formulated. By integrating this model with single-abrasive scratching theory, the thickness of the solid-phase reaction layer was derived. A material removal model grounded in solid-phase chemical reactions was subsequently developed by correlating the abrasive penetration depth with the reaction layer thickness. This model elucidated the effects of critical reaction parameters such as the pre-exponential factor, activation energy, and reaction mechanism function on the material removal rate, along with the effect of polishing pad characteristics, including the distribution of surface asperities, abrasive grain size, and abrasive concentration. To validate the proposed material removal model, experiments were performed with polishing pressures set at 7.5, 15, 22.5, and 30 kPa, and fixed abrasive pad rotational speeds at 40, 50, 60, 70, and 80 r/min, respectively. The experimental parameters were input into the model to compute the theoretical material removal rates, which were then compared with empirical data.
The discrepancy between theoretical and experimental values was within 14%, affirming the model's validity. In the experiments where the material removal rate was investigated as a function of pressure and rotational speed, relatively larger errors were observed under specific conditions. Notably, the errors reached 10.6% and 12.5% at pressures of 7.5 kPa and 30 kPa, respectively, and 12.2% at a rotational speed of 40 r/min. The material removal rate was observed to increase with both polishing pressure and fixed abrasive pad rotational speed.
In fixed solid-phase chemical mechanical polishing, both polishing pressure and fixed abrasive pad rotational speed serve as key factors affecting the reaction activation energy and temperature. Specifically, an increase in pressure reduces the chemical activation energy, while a higher pad rotational speed elevates the interfacial temperature at the contact zone between the KDP crystal and the fixed abrasive pad. These effects collectively enhance the solid-phase reaction rate. As a result, polishing pressure and fixed abrasive pad rotational speed are also identified as dominant factors governing the material removal rate.

关键词

KDP晶体 / 化学机械抛光 / 化学反应动力学 / 固相反应速率模型 / 反应层厚度 / 材料去除模型

Key words

KDP crystal / chemical mechanical polishing / chemical reaction kinetics / solid-phase reaction rate model / reaction layer thickness / material removal model

引用本文

导出引用
斯佳龙, 卢骁, 李岚, 杨连通, 陈凯, 于智, 李军. 基于固相化学反应的化学机械抛光KDP晶体材料去除模型[J]. 表面技术. 2026, 55(9): 35-43
SI Jialong, LU Xiao, LI Lan, YANG Liantong, CHEN Kai, YU Zhi, LI Jun. A Material Removal Model for KDP Crystal in Chemical Mechanical Polishing Based on Solid-phase Chemical Reactions[J]. Surface Technology. 2026, 55(9): 35-43
中图分类号: TG580   

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基金

国家自然科学基金面上项目(52375439); 南京航空航天大学研究生科研与实践创新计划(xcxjh20250515)

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