大气等离子体刻蚀技术在光学元件与半导体加工中的研究进展

吕航; 惠迎雪; 刘卫国; 刘浴岐; 巨少甲; 陈晓; 葛少博; 张进

doi:10.16490/j.cnki.issn.1001-3660.2026.02.011

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表面技术 ›› 2026, Vol. 55 ›› Issue (2) : 134-150. DOI: 10.16490/j.cnki.issn.1001-3660.2026.02.011

功能表面及技术

大气等离子体刻蚀技术在光学元件与半导体加工中的研究进展

吕航^1,2, 惠迎雪^1,2,*, 刘卫国¹, 刘浴岐^1,2, 巨少甲^1,2, 陈晓¹, 葛少博¹, 张进¹

作者信息 +

Advances in Atmospheric Pressure Plasma Etching Technology for Optical Elements and Semiconductor Processing

LYU Hang^1,2, HUI Yingxue^1,2,*, LIU Weiguo¹, LIU Yuqi^1,2, JU Shaojia^1,2, CHEN Xiao¹, GE Shaobo¹, ZHANG Jin¹

Author information +

文章历史 +

摘要

大气等离子体（Atmospheric Pressure Plasma,APP）刻蚀技术凭借非接触加工、常压操作及物理-化学协同去除机制,在光学元件与半导体器件加工领域展现出巨大潜力。然而,现有研究对等离子体-材料原子级相互作用机理、热力学非线性效应及反应副产物控制的系统性认知仍显不足,制约了其规模化应用。为推进APP刻蚀技术在超精密制造领域的突破,本文系统解析了介质阻挡放电、射频放电及微波放电装置的创新设计,深入探讨了工艺参数协同优化机制与表面质量控制策略。研究发现,通过调控气体组分、激活原子选择性刻蚀模式,可同时实现超高材料去除率与原子级表面平整度;阵列化射流技术可大幅提升体积去除率,显著突破大口径元件加工效率瓶颈。同时,通过建立热效应与工艺参数的耦合模型,动态调整加工过程中的工具作用方式,显著降低了加工残差,而纯Ar等离子体诱导的台阶-平台自组织重构可有效消除亚表面损伤。本文还综述了APP刻蚀技术在光学自由曲面、半导体高深宽比结构及第三代半导体器件制造中的创新应用,证实其兼具高效性与原子级精度。最后,前瞻性指出该领域需突破热力学非线性效应控制、难熔副产物层管理、原子级机理认知及大面积均匀等离子体源开发等挑战,为APP刻蚀技术迈向工业级超精密制造提供理论支撑与技术路线。

Abstract

Atmospheric Pressure Plasma (APP) etching technology has emerged as a transformative solution for ultra-precision manufacturing of optical components and semiconductor devices, addressing critical limitations inherent in conventional techniques such as stress-induced subsurface damage, low material removal rates (MRR), and thermal distortion. This technology leverages non-contact processing, ambient pressure operation, and synergistic physico-chemical material removal mechanisms to achieve unprecedented levels of surface accuracy and integrity. This review comprehensively explores the latest research advancements and future directions in APP etching, with focuses on its application in achieving sub-nanometer form accuracy and atomic-scale surface perfection.
The core progress lies in the innovative design and optimization of major APP discharge configurations, including Dielectric Barrier Discharge (DBD), Radio Frequency (RF) discharge, and Microwave (MW) discharge systems. Each system offers distinct advantages. Namely, DBD provides exceptional stability and uniformity for delicate surface treatments; RF discharge balances high electron density with excellent controllability for efficient etching; MW discharge delivers the highest energy density, enabling atomic-level precision, particularly for refractory materials, albeit with higher system complexity. Hybrid excitation strategies, combining different discharge modes, demonstrate significant potential in overcoming the inherent limitations of single-mode systems, offering synergistic performance enhancements.
A pivotal breakthrough is made in the development and mastery of the Atomic Selective Etching (ASE) mode. By precisely controlling plasma chemistry, particularly gas composition ratios, ASE enables the preferential removal of high-energy surface atoms while preserving the underlying lattice. This revolutionary approach achieves an unprecedented unification of ultra-high MRR with atomic-scale surface smoothness, far surpassing the capabilities of traditional Chemical Mechanical Polishing (CMP) or Elastic Emission Machining (EEM). The surface evolution is understood through a three-stage model: initial isotropic smoothing, crystal-orientation dependent structuring, and culminating in the ASE phase for ultimate atomic-level precision.
Surface quality control, paramount for high-end optical and semiconductor applications, has significant advancements. Beyond ASE, techniques like pure Ar plasma exposure induce controlled surface atom migration and self-organized reconstruction, forming highly uniform step-terrace structures on atomically flat surfaces, effectively eliminating subsurface damage (SSD). For materials prone to forming non-volatile reaction byproducts, hybrid processes combining APP etching with periodic pulsed laser cleaning have been developed to remove these layers without substrate damage, restoring etching activity and achieving sub-nanometer roughness. Managing the inherent non-linear thermal effects during etching is critical for maintaining form accuracy. Sophisticated strategies have been implemented, including the development of low-temperature plasma sources, transient thermal modeling to predict temperature fields, dynamic compensation algorithms, and non-linear dwell time optimization. These approaches successfully reduce machining residuals by up to 47.1% and minimize thermal distortion, ensuring process stability and surface uniformity, even for large free-form surfaces.
Despite these remarkable achievements, key challenges persist and define crucial future research directions. Controlling non-linear thermodynamic effects and achieving perfect uniformity over large areas remain significant hurdles. A deeper fundamental understanding of the atomic-scale interaction mechanisms between plasma species and material surfaces under extreme conditions is still essential. Furthermore, scaling the technology for industrial adoption also requires breakthroughs in developing large-area, uniform high-density plasma sources, intelligent multi-axis motion control systems, and closed-loop process monitoring integrating multi-sensor feedback.
In conclusion, APP etching stands at the threshold of transitioning from laboratory innovation to industrial-scale ultra-precision manufacturing. Its unique ability to deliver simultaneously high efficiency, atomic-level accuracy, and low subsurface damage offers a revolutionary pathway for fabricating advanced optical components and semiconductor devices. Addressing the remaining challenges through continued fundamental research into atomic-scale mechanisms, development of novel etching chemistries, advancement of intelligent control strategies for shape and property regulation, and innovation in large-scale plasma source design will solidify APP etching's role as a core engine driving the frontiers of precision manufacturing for next-generation photonics, electronics, and quantum technologies.

导出引用

吕航, 惠迎雪, 刘卫国, 刘浴岐, 巨少甲, 陈晓, 葛少博, 张进. 大气等离子体刻蚀技术在光学元件与半导体加工中的研究进展[J]. 表面技术. 2026, 55(2): 134-150

LYU Hang, HUI Yingxue, LIU Weiguo, LIU Yuqi, JU Shaojia, CHEN Xiao, GE Shaobo, ZHANG Jin. Advances in Atmospheric Pressure Plasma Etching Technology for Optical Elements and Semiconductor Processing[J]. Surface Technology. 2026, 55(2): 134-150

中图分类号： O539 TN305

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