整平剂JGB对局部电化学沉积铜微柱的影响

吴国强, 徐登国, 卿启新, 黄炎光, 朱挺

表面技术 ›› 2025, Vol. 54 ›› Issue (12) : 186-194.

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表面技术 ›› 2025, Vol. 54 ›› Issue (12) : 186-194. DOI: 10.16490/j.cnki.issn.1001-3660.2025.12.017
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整平剂JGB对局部电化学沉积铜微柱的影响

  • 吴国强, 徐登国, 卿启新*, 黄炎光, 朱挺
作者信息 +

Effect of Leveler JGB on Copper Microcolumns Prepared by Localized Electrochemical Deposition

  • WU Guoqiang, XU Dengguo, QING Qixin*, HUANG Yanguang, ZHU Ting
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摘要

目的 研究不同健那绿B(JGB)浓度对局部电化学沉积(LECD)铜微柱形貌、直径尺寸、沉积速率的影响。方法 采用扫描电镜表征不同JGB浓度下沉积的铜微柱微观形貌;通过软件采集沉积时间参数来计算沉积速率,Measure软件测量铜微柱直径。结果 JGB质量浓度低于平衡浓度12 mg/L,随着JGB浓度的增大,加速了铜微柱沉积;JGB质量浓度高于平衡浓度12 mg/L,随着JGB浓度的增大,JGB抑制铜微柱沉积,起到整平抑制的作用;同时JGB整平抑制作用还依赖于沉积电压,在低电压下,对铜微柱的形貌直径影响最大的JGB质量浓度在240 mg/L,但沉积速率最低,而中高电压下JGB的整平抑制作用最佳质量浓度为60 mg/L,沉积速率分别为2.22 μm/s和6.67 μm/s,提高沉积电压,降低了JGB浓度,增强了JGB的整平抑制效果,提高了沉积速率,节省了沉积时间;通过JGB浓度与沉积电压的关系,建立JGB电迁移与分解消耗机理来揭示JGB浓度对LECD制造铜微柱的作用机制。结论 JGB浓度对LECD沉积铜微柱的形貌、直径、沉积速率有显著的影响,在大于平衡浓度情况下,JGB对铜微柱的整平抑制效果最佳沉积电压为3.6 V,质量浓度为60 mg/L。

Abstract

In micro/nano manufacturing technology, localized electrochemical deposition (LECD) has significant advantages for metal micro-size additive manufacturing due to its non-thermal processing characteristic and precise micro/nano-scale control. The morphology, diameter, and deposition rate of metal microstructures produced by LECD have been extensively studied. The work aims to investigate the effect of Janus Green B (JGB) at various concentrations on the copper microcolumn prepared by LECD and further reveal the electromigration-electrolytic consumption mechanism of JGB, demonstrating how JGB levels the morphology, reduces the diameter, and changes the deposition rate.
Based on the LECD technique and the short-circuit contact mode of microanode and cathode, copper microcolumns were deposited on the cathode substrate by controlling a three-dimensional movement platform. The morphology of the copper microcolumns was analyzed with scanning electron microscopy (SEM). Various diameters were measured with Measure software, and the deposition rates were calculated based on deposition time and height. In the LECD process, the leveling inhibition effect of JGB on copper microcolumn deposition depended on the concentration of JGB and the deposition voltage. At different deposition voltages, JGB accelerated the deposition of copper microcolumns at concentrations ranging from 6 mg/L to 12 mg/L (accelerating deposition), while it inhibited deposition of copper microcolumns at concentrations from 12 mg/L to 240 mg/L (inhibition deposition). The maximum deposition rate of copper microcolumns occurred at a JGB concentration of 12 mg/L. However, the leveling inhibition effect was observed during the inhibition deposition, and the ability of JGB to inhibit leveling increased with the increasing concentrations of JGB, as indicated by SEM images of the copper microcolumns. Additionally, the leveling inhibition effect of JGB was also enhanced with the increase of the deposition voltage. At a low voltage of 3.4 V, JGB had minimal effect on the morphology of copper microcolumns at concentrations ranging from 6 mg/L to 60 mg/L, with the diameters of copper microcolumns about 11 μm. The concentration of JGB that had the most significant effect on the morphology and diameter of the copper microcolumns was 240 mg/L, resulting in the smallest diameter of 7.41 μm among all copper microcolumns deposited at varying deposition voltages. However, the deposition rate at this concentration was relatively slow at 0.22 μm/s, leading to longer deposition time. In contrast, JGB effectively leveled the spores and branches of the copper microcolumns as the concentration of JGB increased from 6 mg/L to 60 mg/L. The optimal leveling inhibition concentration of JGB was found to be 60 mg/L at medium voltage (3.6 V), with deposition rates of 2.2 μm/s and 6.67 μm/s, respectively. Therefore, increasing the deposition voltage can enhance the leveling inhibition effect of JGB, reduce the required concentration of JGB, accelerate the deposition of copper microcolumns, and decrease the deposition time.
Consequently, the concentration of JGB has a significant impact on the copper microcolumns prepared by LECD. The combined effects of the deposition voltage and JGB concentration demonstrate that JGB is highly effective in inhibiting and leveling copper microcolumns, providing valuable insights for the LECD manufacturing of metal microstructures.

关键词

健那绿B / 局部电化学沉积 / 铜微柱 / 形貌 / 整平抑制作用 / 机理

Key words

Janus green B / LECD / copper microcolumn / morphology / leveling inhibition effect / mechanism

引用本文

导出引用
吴国强, 徐登国, 卿启新, 黄炎光, 朱挺. 整平剂JGB对局部电化学沉积铜微柱的影响[J]. 表面技术. 2025, 54(12): 186-194 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.12.017
WU Guoqiang, XU Dengguo, QING Qixin, HUANG Yanguang, ZHU Ting. Effect of Leveler JGB on Copper Microcolumns Prepared by Localized Electrochemical Deposition[J]. Surface Technology. 2025, 54(12): 186-194 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.12.017
中图分类号: TQ153   

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基金

国家自然科学基金(62363001); 广西科技大学博士基金(22Z30)

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