精密谐振器件表面导电层原子层沉积制备技术研究

龚婷; 冯昊

doi:10.16490/j.cnki.issn.1001-3660.2025.12.016

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表面技术 ›› 2025, Vol. 54 ›› Issue (12) : 175-185. DOI: 10.16490/j.cnki.issn.1001-3660.2025.12.016

表面功能化

精密谐振器件表面导电层原子层沉积制备技术研究

龚婷, 冯昊^*

作者信息 +

Atomic Layer Deposition Technology for Surface Conductive Layers of Precision Resonant Devices

GONG Ting, FENG Hao^*

Author information +

文章历史 +

摘要

目的利用原子层沉积（ALD）技术在半球陀螺谐振子表面制备Pt导电层。方法以ALD制备的氧化物/金属薄膜为谐振子过渡层,再沉积Pt为导电层。椭圆偏振光谱仪（SE）用于测试薄膜厚度。利用X-射线光电子能谱（XPS）、掠入射X-射线衍射（GIXRD）、扫描电子显微镜（SEM）、原子力显微镜（AFM）分析薄膜组成、晶型、形貌及粗糙度。采用聚焦离子束-透射电子显微镜（FIB-TEM）结合能量色散X射线元素面分布（EDX-mapping）、线扫描分布谱揭示膜层微观结构。采用电子万能试验机测试薄膜和石英片的界面结合强度。结果 SE测试结果表明,Pt/氧化物薄膜体系的Pt平均厚度为123 Å,不均匀度仅为1.6%,Pt/金属薄膜体系的Pt平均厚度为155 Å,不均匀度为4%。XPS显示Pt薄膜主要成分由零价Pt构成,XRD检测到在2θ=39.8°处存在明显的Pt（111）衍射峰。SEM观测到薄膜表面Pt纳米颗粒分布均匀。AFM进一步揭示金属及Pt/金属薄膜粗糙度分别为1.47 nm和0.99 nm。FIB-TEM、EDX-mapping及线扫描分布谱结果表明Pt/氧化物和Pt/金属厚度均匀、致密,膜层界面的元素相互扩散。力学测试显示,氧化物过渡层使界面结合强度提升至7.1 MPa,较无过渡层体系（3.0 MPa）提高1.37倍;金属过渡层体系结合强度最高可达8.4 MPa。结论 ALD技术可以实现半球陀螺谐振子表面高均匀性、高结合强度的Pt薄膜制备。

Abstract

The Pt conductive layer is prepared on the surface of the hemispherical gyroscope resonator by the atomic layer deposition (ALD) technology to improve the uniformity and bonding strength of the Pt thin film.
The oxide/metal thin films, fabricated through ALD, are employed as transition layers for the hemispherical resonator gyroscopes, followed by the deposition of Pt as the conductive layer. To assess the uniformity of the Pt films, a silicon wafer attachment test is designed to simulate the structural characteristics of a hemispherical harmonic oscillator, while spectroscopic ellipsometry (SE) is employed to measure the film thickness. Comprehensive characterization of the films is conducted using advanced analytical techniques: X-ray photoelectron spectroscopy (XPS) is utilized to determine the chemical composition and oxidation state of the films; Grazing-incidence X-ray diffraction (GIXRD) provides insights into the crystallographic orientation and phase purity; A scanning electron microscopy (SEM) and an atomic force microscopy (AFM) are employed to examine surface morphology and quantify roughness parameters of the films. The microstructure, elemental distribution, and interfacial characteristics of the film layers are investigated by focused ion beam-transmission electron microscopy (FIB-TEM) combined with an energy-dispersive X-ray elemental mapping (EDX-mapping) and line scan spectroscopy. The interfacial bonding strength between the Pt/oxide and Pt/metal thin films and quartz substrates is evaluated with an electronic universal testing machine.
SE analysis demonstrates that the Pt/oxide thin film system achieves exceptional thickness uniformity, with an average Pt layer thickness of 123.0 Å and a remarkably low non-uniformity of 1.6%. The Pt/metal system demonstrates a slightly higher average thickness of 155.0 Å, accompanied by a non-uniformity value of 4%. SEM characterization reveals that both Pt/oxide and Pt/metal thin films exhibit uniform nanoparticle distribution across their surfaces, without observable pore defects, confirming the defect-free morphology enabled by the ALD process. AFM further quantifies the surface roughness, showing values of 1.47 nm for the metal transition layer and 0.99 nm for the Pt/metal composite film. XPS analysis conclusively identifies that the ALD-synthesized Pt films are predominantly composed of metallic Pt in the zero-valent state, without detectable impurities or oxidized species. Structural characterization via XRD reveals a prominent Pt(111) diffraction peak at 2θ = 39.8°, confirming the face-centered cubic crystalline structure of the deposited Pt. FIB-TEM cross-sectional imaging, complemented by EDX-mapping, further corroborates the uniformity and density of both Pt/oxide and Pt/metal films. Critically, elemental line scans across the interfaces demonstrate mutual diffusion between Pt and constituent elements of the transition layers, indicative of robust interfacial interactions. Mechanical evaluation reveals significant enhancements in bonding performance: the oxide transition layer system achieves an interfacial bonding strength of 7.1 MPa, representing a 1.37-fold improvement over the non-transition-layer reference system (3.0 MPa). The Pt/metal system surpasses this performance, attaining a maximum bonding strength of 8.4 MPa.
By implementing ALD-engineered transition layers, this study successfully realizes the fabrication of Pt films with exceptional uniformity and robust interfacial adhesion on hemispherical resonators. The interdiffusion behavior between Pt and transition layer elements significantly enhances interfacial bonding strength. This methodology provides technical support for the precision manufacturing of highly reliable resonant devices, offering a scalable solution for next-generation inertial navigation systems.

导出引用

龚婷, 冯昊. 精密谐振器件表面导电层原子层沉积制备技术研究[J]. 表面技术. 2025, 54(12): 175-185 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.12.016

GONG Ting, FENG Hao. Atomic Layer Deposition Technology for Surface Conductive Layers of Precision Resonant Devices[J]. Surface Technology. 2025, 54(12): 175-185 https://doi.org/10.16490/j.cnki.issn.1001-3660.2025.12.016

中图分类号： TG174

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