目的 基于Y掺杂高纯铪靶和钛靶的反应磁控溅射方法，在Si(100)基底上沉积掺杂Y氧化铪薄膜，以及TiN/X-HfO2/TiN三层异质结构，探究Y掺杂对氧化铪基异质结构铁电性的影响。方法 针对反应磁控溅射制备的Y掺杂HfO2薄膜和异质结构，分别采用白光干涉仪、掠入射X射线衍射(GIXRD)、X 光电子能谱仪(XPS)和铁电分析仪，对薄膜的沉积速率、退火后薄膜的晶体结构、掺杂元素组分及含量，以及HfO2基异质结薄膜P-E电滞回线和I-V曲线进行测量。结果 在相同工艺条件下，薄膜的沉积速率随着工作气压的增大呈先增大后减小的趋势，在工作气压为1.1 Pa时沉积速率达到最高值。XRD结果表明，薄膜经过退火后存在正交相(o相)和单斜相(m相)。当工作气压为0.7 Pa时，所制备HYO薄膜在28°~30°内代表o(111)相的衍射峰最强，具有最佳的铁电性。随着工作气压的增大，代表m(111)相的衍射峰强度逐渐下降。采用XPS分析了薄膜中各元素的化学状态和含量，在工作气压为0.7 Pa时，Y的掺杂浓度(物质的量分数)为5.6%，铁电分析结果表明，在工作气压从0.7 Pa增至1.3 Pa的过程中，Y掺杂的HfO2基异质结的电滞回线逐渐收缩。在工作气压为0.7 Pa时，剩余极化强度Pr的最大值为14.11 μC/cm²，矫顽场Ec约为1 MV/cm。结论 利用Y掺杂高纯铪靶反应磁控溅射制备的掺杂铁电薄膜，在工作气压0.7 Pa下得到的薄膜经过700 ℃退火后具备良好的铁电性能。

HfO2-based high dielectric constant (high-k) materials have been successfully used as a ferroelectric or memristive material in nonvolatile memory devices and for novel neuromorphic computing concepts. Ferroelectric HfO2 thin film is demonstrated by incorporating various cation dopants into HfO2. Doped HfO2 thin film has been widely studied as the most promising candidate material for microelectronic devices in the last decade. Several methods have been reported for achieving ferroelectricity in HfO2, such as atomic layer deposition (ALD), physical vapor deposition (PVD), and chemical vapor deposition (CVD). Compared with ALD and CVD, the Reactive magnetron sputtering method has a low pollution level due to the high purity of target material and has been well appreciated in the industry due to the high deposition rate of compounds. Doped HfO2 thin films have been prepared by RF reactive magnetron co-sputtering using Hf target and cation dopants target, However, uniformity of doping and thickness is limited to the size of the area oblique angle of two different targets. In this work, High quality Y-doped thin films have been deposited using a Y-doped hafnium cathode sputtering target several small pieces of Y metal were put evenly into the sputtering zone of the target surface.