物理气相沉积作为制备表面防护薄膜的重要方法，一直是表面薄膜领域研究重点，而物理气相沉积中等离子体作为直接影响薄膜性能的关键因素，其参数的表征对优化沉积工艺和提高薄膜性能具有重要指导意义。概述了常用物理气相沉积方法及其发展，包括电弧离子镀、磁控溅射和电弧磁控复合技术的原理及发展历程。归纳了目前生产中常用的等离子体参数表征方法——Langmuir探针法、汤姆逊散射法、微波干涉法和发射光谱法，阐明了这些表征方法诊断等离子体参数的原理，分析了不同表征方法的优缺点和存在的主要问题，并对常用物理气相沉积中等离子体参数表征相关研究的发展和现状作了综合论述和总结，分别整理了电弧离子镀和磁控溅射中等离子体参数诊断的发展历程和近期研究。两种物理气相沉积方法最常用的等离子体参数表征方法都是Langmuir探针法和发射光谱法，早期的研究侧重于探索等离子体瞬态参数和薄膜结构性能的关系。随着现代技术的进步，早期诊断方法不断与新技术融合，研究方向也逐渐偏向于研究等离子体参数的时间变化和优化薄膜工艺、性能评价方法。最后分析了当前物理气相沉积中等离子体参数表征存在的问题和不足，展望了等离子体参数未来的研究趋势。

As an important method for preparing surface protective films, physical vapor deposition is always the research focus in the field of surface films. Plasma in physical vapor deposition is a key factor that directly affects the performance of films. The characterization of its parameters has important guiding significance for optimizing the deposition process and improving the performance of films. The paper summaries the common physical vapor deposition methods and their development, including the principle and development process of arc ion plating, magnetron sputtering and arc magnetic control composite technology and generalizes the commonly used characterization methods of plasma parameters in current production, including Langmuir probe method, Thomson scattering method, microwave interference method and emission spectrum method, of which the principle for diagnosing plasma parameters is expounded and the advantages and disadvantages and the main problems are analyzed. The development and current situation of plasma parameter characterization in common physical vapor deposition are summarized, and the development and recent research of plasma parameter diagnosis in arc ion plating and magnetron sputtering are sorted out. Langmuir probe method and the emission spectrum method are the most commonly used methods for plasma parameter characterization of physical vapor deposition. Early studies focused on exploring the relationship between plasma transient parameters and the structural properties of thin films.. With the progress of modern technology, the early diagnosis methods are constantly integrated with new technologies, and the research direction is also gradually inclined to study the time variation of plasma parameters and optimizes thin-film processing and performance evaluation methods. Finally, the paper analyzes problems and shortcomings of plasma parameters characterization in physical vapor deposition and prospects the future research trend of plasma parameters.