目的 在碱液腐蚀制备多晶硅表面织构过程中施加具有方向性的强磁场，研究强磁场对多晶硅表面织构减反射的影响。方法 在非磁场和1、2、3、4 T磁场作用下，用NaOH溶液腐蚀制备多晶硅表面织构，用电子天平称量表征硅片腐蚀程度，用奥林巴斯LEXT OLS4100共聚焦显微镜观察多晶硅片表面形貌，用Ocean Optics USB4000光谱仪测量多晶硅片的反射率，用WT-1200硅片测试仪测量样品少子寿命。结果 随磁感应强度的增大，多晶硅片的腐蚀程度增强，多晶硅片腐蚀程度由非磁场条件下处理的2.1%，变化为磁感应强度为1 T时的2.8%，2 T时的3.9%，3 T时的5.3%，到4 T时的6.3%，同时多晶硅表面织构变得均匀且细腻。多晶硅片的反射率随磁感应强度的增大而降低，由非磁场条件下处理硅片的23.9%，变化为磁感应强度为1 T时的19.2%，2 T时的17.5%，3 T时的15.9%，到4 T时的14.5%。另外，随磁感应强度的增大，多晶硅片少子寿命略有降低。结论 在碱液腐蚀制备多晶硅表面织构过程中施加强磁场，多晶硅片腐蚀程度增强的同时，表面织构的微结构更趋合理，减反射效果显著。

In order to investigate the effect of high magnetic field on the anti-reflection of the polysilicon surface texture, a directional high magnetic field was applied when polysilicon surface texture was prepared by alkali etching. Polysilicon surface texture was prepared by etching with NaOH solution under non-magnetic fields and 1 T, 2 T, 3 T, 4 T magnetic fields. The degree of silicon corrosion and the surface topography was characterized by the electronic balance weighing and the Olympus LEXT OLS4100 confocal microscope. The reflectivity and the minority life of the sample was measured through the Ocean Optics USB4000 spectrometer and the WT-1200 wafer tester. The results show that with the increase of magnetic induction intensity, the corrosion degree of polysilicon was enhanced. The corrosion degree of polysilicon was changed from 2.1% in non-magnetic field to 2.8% in 1 T, 3.9% in 2 T, 5.3% in 3 T and 6.3% in 4 T. At the same time, the surface texture of polysilicon became more and more uniform and fine. The reflectivity of polysilicon decreased with the increase of magnetic induction intensity and was changed from 23.9% in non-magnetic field to 19.2% in 1 T, 17.5% in 2 T, 15.9% in 3 T and 14.5% in 4 T. In addition, the minority life of polysilicon wafer slightly decreased with the increase of magnetic induction intensity. In the process of polysilicon surface texture fabrication by alkali etching, a high directional magnetic field is applied, which results in faster corrosion rate, more reasonable microstructure and remarkable anti-reflection effect.