目的 研究非晶碳膜的压阻性能和机理，并将其作为压敏电阻应用于MEMS压力传感器敏感电路中。方法 使用直流溅射工艺制备非晶碳膜压敏薄膜材料，对典型样品进行内部组分和电学、力学、温度等性能测试和研究，使用有限元方法进行器件设计仿真，借助MEMS加工工艺完成非晶碳膜压力传感器芯片的加工，最后进行器件级别的测试和分析。结果 在0~1 MPa范围内，压力传感器芯片的灵敏度为9.4 μV/kPa，输出信号的非线性度为5.57% FS；对压敏电阻进行–70~150 ℃范围内的温度性能研究，其阻值与温度之间表现出较强的线性关系，且在–20~150 ℃段，线性度更强，表明非晶碳膜压敏材料在高温段应用时更容易补偿。机理研究方面，非晶碳膜在厚度方向上表现出组分差异化，因此该方向也应被纳入机理模型建立中。结论 非晶碳膜在加工工艺、力学性能以及电学性能上与传统的MEMS传感器芯片能够很好地结合，加工得到的非晶碳膜压阻式压力传感器灵敏度和线性度较为理想。此外，其压阻机理研究应纳入薄膜厚度方向。

The paper aims to study the piezoresistive performance and mechanism of amorphous carbon (a-C) film and apply it in the sensitive circuit of micro-electromechanical system (MEMS) pressure sensor. In this paper, the a-C film piezoresistive material was deposited by direct-current (DC) sputtering process. The phase content and the electrical, mechanical and thermal performance of the representative sample were characterized. Then the device was designed by finite element simulation. And the a-C carbon film pressure sensor was successfully fabricated by MEMS processes to carry out test and analysis of device level. The sensitivity of the pressure sensor chip was 9.4 μV/kPa and the non-linearity of output signal was 5.57% FS (full scale) in the range of 0 to1 MPa. The change of the a-C film resistor’s resistance showed linear relation at –70 to 150 ℃. Especially at –20 to 150 ℃, that relation was stronger, which showed that the temperature compensation for the a-C piezoresistive material was easier in high temperature environment. The phase content varied along the thickness-direction of the film, which implied this direction was also needed to be considered in the mechanism research. In conclusion, the a-C carbon film can be well-combined with the traditional MEMS sensor chip in terms of fabrication process, and mechanical and electrical properties. Finally, the a-C piezoresistive pressure sensor also shows satisfactory sensitivity and linearity Furthermore, the thickness-direction of a-C film should be added into the mechanism research.