目的 提高埋入式薄膜电阻材料的电性能，使其具有较大的方阻值、电阻率和较小的电阻温度系数。方法 利用闭合磁场非平衡反应磁控溅射技术，制备C、N共掺杂NiCr合金埋入式薄膜电阻材料。以前期优化后的溅射参数作为基本实验条件，通过改变氮气流量，分别在铜箔基底和参照基底载玻片上，沉积C、N共掺杂NiCr合金埋入式薄膜电阻材料。用扫描电子显微镜（SEM）和白光干涉仪表征薄膜的表面形貌，用X射线衍射仪（XRD）表征薄膜的微观结构，用X射线光电子能谱仪（XPS）、X射线能量散射谱仪（EDS）测试薄膜的成分，用表面轮廓仪测膜厚，用拉曼光谱仪分析薄膜中的C元素，用四探针测量系统测试埋阻的方阻值和热稳定性。结果 随着氮气流量的增加，薄膜的衍射峰减弱，非晶化程度增强；当氮气流量为15 mL/min时，薄膜能获得较小的电阻温度系数和较大电阻率，此时薄膜的电阻温度系数范围为0≤TCRNiCrCN≤ 1.663′10-4 K-1，电阻率可达到2.2970×10-3 Ω×cm。结论 反应溅射中产生的中间相Cr2N和CN对薄膜的电阻率和方阻值有影响，C、N共掺杂NiCr合金埋入式薄膜电阻材料的电性能优于NiCr合金薄膜和C掺杂NiCr合金薄膜电阻材料。

The work aims to improve the electrical properties of embedded thin film resistor (ETFR) materials, so that they can have larger square resistance value and resistivity as well as smaller resistance temperature coefficient. C/N co-doped NiCr alloy ETFR materials were prepared by reactive closed-field unbalanced magnetron sputtering. With the optimized sputtering parameters obtained in previous experiments as the basic experimental conditions, C and N co-doped NiCr alloy ETFR materials at different nitrogen flow rate were respectively deposited on copper foil substrates and glass slides substrates by changing the nitrogen flow rate. The surface morphology of film was examined by SEM and white light interferometer; the microstructure of film was characterized by XRD; the composition of film was investigated by XPS and EDS; the thickness of film was determined by calibrated surface profiler; the carbon in film was analyzed by Raman spectroscopy; and the sheet resistance and thermal stability of the ETFR were measured by Four-Probe Measuring System. The diffraction peaks and the amorphous ingredient of thin films respectively decreased and increased with the increasing of nitrogen flow rate. When the nitrogen flow rate was 15 mL/min, the thin film could obtain small resistance temperature coefficient and large resistivity. The TCR of thin film was in the range of 0￡TCRNiCrCN￡1.663′10-4 K-1 and the resistivity of thin films was 2.2970×10-3 Ω×cm. The intermediate phases Cr2N and CNs produced during reactive sputtering have effect on the resistivity and sheet resistance of thin film. The electrical properties of the C and N co-doped NiCr alloy ETFR materials are better than those of NiCr alloy ETFR materials and C-doped NiCr alloy ETFR materials.