目的 实现钽酸锂材料的高效、高质量、低成本加工。方法 选择合适的添加剂作为辅料，利用树脂结合剂将3000#的金刚石磨料通过配混料、固化、压实、修整等步骤，制成金刚石固结磨料盘。以加工过程中钽酸锂工件的材料去除率、表面形貌以及粗糙度等作为评价指标，在相同粒径条件下，用游离磨料、固结磨料磨盘对钽酸锂晶片进行加工，对比加工结果。结果 在压力为4 kPa、研磨盘转速为140 rad/min的条件下，3000#金刚石游离磨料铸铁盘研磨Y-36°钽酸锂晶片10 min后，材料去除率为37.89 μm/h，表面粗糙度Sa由420 nm改善至233.308 nm，但是晶片表面出现深划痕，从而导致易破碎，且有少量磨粒残留在钽酸锂晶片上。而在相同加工条件下，采用3000#金刚石固结磨料盘研磨Y-36°钽酸锂晶片10 min后，材料去除率为66.19 μm/h，表面粗糙度Sa降低至97.004 nm，且晶片表面划痕较浅，无磨粒残留在钽酸锂晶片上。结论 采用固结磨料盘加工后的表面粗糙度比游离磨料加工后的表面粗糙度更低，表面形貌更好，材料去除率更高，达到了钽酸锂晶片精研的加工效率和表面质量。同时固结磨料盘研磨LT晶片时，其表面粗糙度随压力、转速增大而减小，材料去除率随压力、转速增大而增大。

The paper aims to provide a high-efficiency, high-quality and low-cost machining method for lithium tantalite (LT). A fixed abrasive pad with 3000# diamond abrasive, resin bonder, and compounded with auxiliary material was manufactured through mixing, curing, compaction, trimming, etc. The material removal rate (MRR), surface morphology and roughness (Sa) were chosen as indicators to evaluate the processing performance of LT wafer machined with free abrasive and fixed abrasive pad, and compare the processing results of free abrasive with fixed abrasive pad under the same test condition. At 40 kPa and 140 rad/min, the Y-36° LT wafer was lapped with 3000# free abrasive pad. 10 minutes later, the MRR of the LT was 37.89 μm/h and the surface roughness Sa was decreased from 420 nm to 233.308 nm. There were deep scratches on the surface and they were likely to cause wafer breaking. Small amount of abrasive grains embedded on the LT wafer after machining can be observed. Under the same conditions, the LT wafer was also lapped with the fixed abrasive pad. 10 minutes later, the MRR of the LT was 66.19 μm/h and the surface roughness Sa was decreased to 97.004 nm, shallow scratches can be observed on the wafer surface, and none abrasive particle were embedded on the surface of LT wafer. Compared with the result from the free abrasive lapping, the test using the fixed abrasive pad has better surface morphology, higher material removal rate and better finishing efficiency. When the LT wafer is lapped with fixed abrasive pad, the surface roughness of LT wafer decreases with the increase of pressure and speed; while the MRR increases with the increase of pressure and speed.