目的 研究溅射功率对CoCrFeNi高熵合金薄膜硬度和电阻率的影响，期望获得同时具有高硬度和高电阻率的高熵合金薄膜，为其在电阻薄膜领域的应用提供实验基础。方法 在不同溅射功率条件下（40、60、80、100 W），利用CoCr合金靶、Ni片和Fe片拼接成合金靶，采用磁控溅射法在硅基底表面沉积CoCrFeNi高熵合金薄膜。利用XRD分析薄膜相结构，通过SEM分析薄膜成分和形貌，利用显微硬度计测量薄膜硬度，采用双电测四点探针法测定薄膜电阻率。结果 不同溅射功率下制备的CoCrFeNi薄膜均与基底结合良好，呈柱状生长模式，且合适的溅射功率有助于获得等摩尔比高熵合金薄膜。随着溅射功率由40 W升高至100 W，薄膜结晶性得到改善，形成简单的FCC相，（111）择优生长更加强烈，柱状生长愈加明显，晶粒尺寸增大，硬度和电阻率降低。结论 溅射功率对CoCrFeNi薄膜组织和性能具有重要影响。当溅射功率为40 W时，CoCrFeNi薄膜同时具有最高硬度和最大电阻率，其值分别为940.5HV和336.5 μΩ?cm。

The work aims to study the effect of sputtering power on the hardness and electrical resistivity of CoCrFeNi high entropy alloy films, so as to obtain high-entropy alloy films with high hardness and electrical resistivity and provide experimental basis for their application in the field of resistive thin films. Under different sputtering power (40, 60, 80, 100 W), CoCr alloy, Ni and Fe sheet were used to manufacture the splicing alloy target and the CoCrFeNi high entropy alloy films were deposited on silicon substrates by magnetron sputtering. The phase structure, composition and morphology of the films were analyzed by XRD and SEM, respectively. The microhardness tester was used to measure the film hardness. The electrical resistivity of the films was measured by four-point probe method. CoCrFeNi films prepared at different sputtering power had good bonding with the substrate and presented columnar growth pattern, and appropriate sputtering power was helpful to obtain high-entropy alloy films with equal molar ratio. As the sputtering power increased from 40 W to 100 W, the crystallinity of the films was improved, and simple FCC phase was formed. The preferred growth of (111) and columnar growth became more obvious too. With increased sputtering power, the grain size increased, and the hardness and resistivity decreased. Obviously, the sputtering power has an important effect on the structure and properties of CoCrFeNi films. When the sputtering power is 40 W, the CoCrFeNi film has the highest hardness and electrical resistivity, which are 940.5HV and 336.5 μΩ?cm, respectively.