目的 通过掺杂不同量的ZnO提升ZnSb相变薄膜的晶化温度和晶态膜电阻。方法 采用磁控溅射双靶共溅方式制备不同含量ZnO掺杂的ZnSb薄膜，使用真空四探针设备原位测试薄膜电阻随温度的变化情况，用EDS、DSC、XRD、Raman、FESEM、UV-Vis分别对薄膜的成分、晶化温度和熔点、掺杂薄膜的结构、薄膜厚度、表面形貌以及光学带隙进行分析。结果 ZnO掺杂量为1.6%时，ZnO掺杂提升了薄膜的晶化温度和晶态薄膜的电阻，并抑制了ZnSb晶粒的长大。薄膜的晶化温度由253 ℃提升至263 ℃，光学带隙由0.37 eV提升至0.38 eV，掺杂薄膜晶粒大小为20 nm左右，远低于未掺杂的50 nm。掺杂薄膜内的O原子更易与Sb结合，过多的ZnO掺杂会使薄膜结晶后形成Sb2O3晶粒，使薄膜的晶化温度下降。结论 低含量ZnO掺杂的ZnSb薄膜具有更高的晶化温度、更细小的ZnSb晶粒以及更高的膜电阻；过量的ZnO掺杂使薄膜在结晶后产生分离的Sb2O3相，恶化薄膜性能。

The work aims to increase the crystallization temperature and crystalline sheet resistance of ZnSb film by doping different amounts of ZnO. These doped ZnSb films of different ZnO content have been deposited by magnetron sputtering. The relationships between sheet resistance and temperature of films were measured by vacuum in situ four-probe device. Chemical composition, microstructure, crystallization and melting temperature, film thickness and surface morphology, and optical band gap were analyzed by using EDS, XRD, Raman, DSC, FESEM and UV-Vis. The results show, when the doped ZnO content was 1.6at%, the crystallization temperature of the film increased from 253 ℃ to 263 ℃ and the optical band gap promoted from 0.37 eV to 0.38 eV. At the same time, the grain size of doped film was about 20 nm, which was much lower than that of un-doped films. The results of structural analysis for these films showed that the element O was more easily combined with Sb. When ZnO was excessively doped, Sb2O3 phase would precipitate in these films, which would decrease the crystallization temperature. Doping low content of ZnO can make films result in higher crystallization temperature, finer ZnSb grains and higher sheet resistance of ZnSb films. However, excessive ZnO doping can also result in the formation of separated Sb2O3 phase, which deteriorate the properties of the films.