目的 基于电介质击穿理论，从本质上研究异质金属表面整体氧化过程中的反应机理。方法 根据已有的实验基础，在单独的铝合金材料表面和异质铝合金焊接件表面制备一层整体等离子体氧化膜。通过电介质击穿实验，对异质金属整体等离子体氧化过程中存在的时序性和选择性机理进行验证。并基于电介质击穿理论，深入分析不同材质表面固态电介质击穿机理，进而研究异质金属表面整体陶瓷膜生长机理。结果 不同材质的物理/化学活性影响等离子体氧化过程，化学活性高的金属优先发生陶瓷化反应，进而引起陶瓷膜的非平衡生长。结论 异质金属整体等离子体氧化过程中存在时序性与选择性，这种时序性与选择性与材料的化学活性有关。

The work aims to study the mechanism of the overall plasma oxidation on the surface of dissimilar metals connected part based on dielectric breakdown theory. Based on the existing experiments, a layer of overall plasma oxidation film was prepared on aluminum alloy and dissimilar aluminum alloy welded part. The timing and selectivity mechanism of overall plasma oxidation on the surface of dissimilar metals were verified by dielectric breakdown experiment. Based on dielectric breakdown theory, the mechanism of solid state dielectric breakdown on different material surfaces was deeply analyzed to study the growth mechanism of overall ceramic coating on dissimilar metal surfaces. The physical/chemical activity of different materials affected the plasma oxidation process. Metals with high chemical activity preferentially underwent ceramization reaction, thus causing non-balanced growth of ceramic membrane. There are timing and selectivity in the overall plasma oxidation process of dissimilar metals, which are related to the chemical activity of materials.