目的 保持硬质合金预处理后基体的强度和表面光洁度，并且提升沉积的金刚石薄膜的膜基结合力。方法 使用真空管式炉设备对硬质合金进行真空热处理气态渗硼，然后使用热丝化学气相沉积系统（HFCVD）沉积金刚石薄膜。之后采用X射线衍射仪、扫描电子显微镜（SEM）、能谱分析仪（EDS）、拉曼光谱仪、表面轮廓仪和洛氏压痕测试仪等对样品的结构、形貌和膜基结合性能进行了分析。结果 使用真空热处理气态渗硼法可以在较短时间内完成硬质合金的硼化处理，得到以CoWB相为主的渗硼层，并且具有高温稳定性，表面硬度较未硼化处理的样品提高了15%~20%，最高硬度达到2445HV。相较于酸碱刻蚀二步法预处理，渗硼处理更加有效地改善了膜基结合力，当渗硼温度在1000 ℃时，可以更加有效抑制基体中的Co颗粒向外扩散，制备的金刚石薄膜质量最优，薄膜和基体的结合性能也更加优异。结论 采用真空管式炉进行的热处理气态渗硼预处理法可以简单高效地实现对硬质合金的硼化处理，重复性好，并且可大批量处理，处理后沉积的金刚石薄膜有良好的膜基结合力。

The work aims to maintain the strength and surface finish of the cemented carbide after pretreatment and enhance the adhesion of the deposited diamond film. Vacuum heat treatment gaseous boronizing was proposed to the WC-Co by vacuum tube furnace. Then, the diamond films were deposited by hot filament chemical vapor deposition (HFCVD). The structure, morphology and film-substrate adhesion strength of the samples were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Raman spectroscopy, surface profiler and Rockwell indentation test. The boronization treatment of cemented carbide could be completed in a short time by vacuum heat treatment gaseous boronizing method to obtain a boride layer mainly composed of CoWB phase and with high temperature stability. The surface hardness was increased by 15%~20% compared with the samples without boronization treatment, and the maximum hardness was 2445HV. Compared with the two-step pretreatment of acid and alkali etching, the boronizing treatment was better to improve the film-substrate adhesion. When the boronizing temperature was 1000 ℃, the outward diffusion of Co particles from the internal substrate could be more effectively inhibited, the quality of the deposited diamond films was the best, and the film-substrate ad-hesion property was also more outstanding. The heat treatment gaseous boronizing provides a simple and efficient mean to pretreat the WC-Co, which has good repeatability and can be used for mass processing. The deposited diamond films after pretreatment have good film substrate adhesion.