目的 降低微机电系统表面粘着接触失效。方法 考虑纳尺度粘附力﹑单晶铜弹塑性形变及各向异性影响。基于分子动力学法的混合势函数（EAM 和 Morse）和 Verlet 算法，对不同曲率半径探针与单晶铜基底粘着接触失效特性进行研究，通过计算原子中心对称参数来描述接触区域原子破坏和迁移轨迹变化。结果 研究发现探针与基底尚未接触时（即位移小于 1 nm）的粘附接触力不受探针曲率半径影响；而探针下降位移大于 1 nm 时，探针曲率半径对粘附接触力曲线有着重要影响，即探针曲率半径越大，粘附接触力也越大，导致基底弹塑性变形更加剧烈，易诱导单晶铜基底大量原子粘附于探针底表面，产生明显的粘着效应；此外，探针曲率半径越大，接触体间粘着滞后现象越明显。结论 此研究结果将对微机电系统的粘着接触失效机理和微机械产品表面轮廓设计有着重要的实践指导意义。

In order to reduce the adhesive contact failure happens on MEMS products, Some influence factors are considered, including the adhesive force and the elastic-plastic deformation on substrate, and the adhesive contact failures on two body (with different probe radius and cooper substrate) were researched by molecular dynamics method based on embedded atom potentials and verlet algorithms. Furthermore, the center-symmetric parameter are applied to described destruction area and migration path changes at nano-scale. This research works found that the adhesion contact force was not affected by different probe radius before contacting (the displacement ≤1 nm). As probe displacement increased (the displacement ≤1 nm), the curvature radius of diamond have an significance influence on adhesion contact force curve. It also found that the larger diamond probe radius was, the more elastic-plastic deformation intense on cooper substrate, and the contact force versus displacement presents saw tooth situation obviously, which result the substrate was destroyed seriously, so that a large number of atoms were adhered on diamond probe surface, which it means that the adhesive contact failure and adhesion hysteresis phenomenon would happened. This result has important practical significance on researching the mechanism of adhesion contact failures and designing device products surface profile on MEMS products.