目的 通过真空镀膜工艺，获得电学性能优良的钒氧化物薄膜。方法 采用直流反应磁控溅射法，通过改变镀膜时部分实验条件，包括沉积气氛中氧含量、衬底温度以及衬底材质，进而控制薄膜组成成分。利用椭偏仪、XRD和变温四探针仪检测所镀钒氧化物薄膜的厚度、晶体结构及电学性能。结果 衬底温度在350~400 ℃之间，镀膜室氧气含量在40%~50%之间时，反应溅射所得的钒氧化物薄膜具有较高的温度敏感性，此外得益于（0001）面的α-Al2O3与VO2有相近的晶格参数，在此衬底上沉积出的钒氧化物薄膜电阻在30~100 ℃区间内有一个数量级的线性变化。结论 确定了最佳的钒氧化物薄膜镀制条件范围，同时发现蓝宝石衬底相比于硅片和玻璃片更适合外延生长VO2薄膜。按此种方法所得样品具有优良的电学性能，可以应用到热敏电阻等研究领域当中。

The work aims to acquire vanadium oxides thin films of excellent electrical properties by adopting vacuum coating process. Composition of the films was controlled in the method of DC reactive magnetron sputtering by changing some experimental conditions of coating including oxygen content, substrate temperature and substrate material. Thickness, crystal structures and electricity properties of the coated films were studied by ellipsometer, X-ray diffractometer (XRD), and four-probe conductivity meter. The vanadium oxides thin films obtained by reactive sputtering had high temperature sensibility as oxgen content in coating chamber ranged from 40% to 50%. In addition, benefiting from similar lattice parameters of Al2O3 (on 0001 crystal face) substrate and VO2 films, there was an order of magnitude of linear variation in resistance of the thin films deposited on Al2O3 substrate at 30~100 ℃. Optimal scope of coating condition for vanadium oxides is determined, and it is found that Al2O3 substrate is more suitable for epitaxial growth of VO2 films than that of silicon and glass. The samples obtained in this method have excellent electrical properties and can be applied to such research fields as thermistor.