目的 研究Al靶直流溅射功率对Al掺杂ZnO（AZO）薄膜光电性能的影响。方法 以金属Al和ZnO陶瓷作为靶材，采用直流与射频双靶磁控共溅射的方法，在玻璃基片上制备AZO薄膜。通过改变Al靶直流溅射功率，获得不同的薄膜。采用X射线衍射仪（XRD）、光电子能谱仪（XPS）、原子力显微镜（AFM）、紫外-可见分光光度计（UV-Vis）、四探针测试仪，对薄膜的微观形貌结构及光电性能进行表征和分析。结果 所制备的AZO薄膜均具有C轴取向生长的六角纤锌矿结构，在可见光区域平均透过率超过90％，AZO薄膜的吸收边相比于ZnO薄膜出现了蓝移。当Al靶溅射功率为18 W时，AZO薄膜的最低电阻率为2.49×10?3 Ω?cm，品质因子为370.2 S/cm。结论 Al直流溅射功率对AZO薄膜光电性能的影响较大，溅射功率为18 W时，制备的AZO薄膜性能最优。

The work aims to study the effect of Al DC sputtering power on opto-electrical properties of Al thin films mixed with ZnO (AZO). The metal Al and ceramics ZnO were used as target materials. DC and RF magnetron sputtering method was adopted to prepare AZO thin film on the glass substrate. The structure and properties of AZO thin films were studied by changing Al DC sputtering power. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), ultraviolet spectrophotometer (UV-Vis) and four-point probe meter were adopted to analyze and characterize the microstructure and opto-electrical properties of thin films. The prepared AZO thin films had hexagonal wurtzite structure oriented to axis C. The average optical transmittance of all thin films was over 90％ in visible range. All the AZO thin films presented blue shift at absorption edge when compared with intrinsic ZnO thin films. When the DC sputtering power of Al was 18 W, the lowest resistivity of AZO thin films was 2.49×10?3 Ω?cm and the corresponding quality factor was 370.2 S/cm. Therefore, the DC sputtering power of Al strongly affects the opto-electrical properties of AZO thin films and the properties of AZO thin films prepared when the sputtering power is 18 W was the best.