目的 提高碳素薄膜的场发射性能。方法 在热丝化学气相沉积（HFCVD）技术的基础上，针对不同的甲烷浓度（体积分数，全文同）1%和5%，通过施加外场（电场、磁场以及电磁耦合场）分别调控出不同组织结构的薄膜。采用SEM观察薄膜的表面形貌，用Raman检测薄膜的成分，用场发射测试装置来表征薄膜的场发射性能。结果 外场作为革新传统工艺的手段，可以影响HFCVD沉积过程。磁场的主要作用是降低晶粒尺寸，电场能够有效促进sp3相向sp2相转变，电磁耦合场在此基础上，还可以有效调控出高长径比的表面形貌。甲烷浓度为1%时，制备了金刚石薄膜，开启电场为11.2 V/μm，加入电场或电磁耦合场后，薄膜表面被刻蚀，发生金刚石向石墨的转变，开启电场降低到6.75 V/μm，场发射性能提高。甲烷浓度为5%时，加入磁场、电场制备的薄膜，开启电场由12.75 V/μm依次下降为11.5、9 V/μm，电磁耦合场的刻蚀作用可以获得尖锥状的形貌，且石墨相含量高，开启电场最低（5.65 V/μm），场发射性能最好。结论 采用外场（电场、磁场以及电磁耦合场）辅助HFCVD的方式可以制备出多种薄膜，电磁耦合场在较高甲烷浓度时，不但可以提高石墨相含量，还可以获得高长径比的表面形貌，可有效提高薄膜的场发射性能。

The work aims to improve field emission properties of carbon films. By taking advantage of hot filament chemical vapor deposition (HFCVD) technology, carbon films with different microstructures were prepared by applying external fields (electric field, magnetic field and electromagnetic coupling field)in respect of different methane concentrations 1% and 5% (volume fraction, full text of the same ). Surface morphology of the films was observed using SEM, composition of the films was detected using Raman, andfield emission properties were characterized using field emission testing device. As a means of innovating traditional crafts, external field could influence the deposition process of CVD. The magnetic field could reduce grain size while electric field could effectively promotetranformation from sp3 phase to sp2 phase. On this basis, electromagnetic coupling field could effectively control surface morphology of high aspect ratio. Diamond film was prepared and turn-on field was 11.2 V/μm provided with methane concentration of 1%. After electric field or electromagnetic coupling field was applied, the film surface was etched, the diamond film was transformed into graphite film, turn-on field was reduced to 6.75 V/μm and the field emission properties were improved. Provided with methane concentration of 5%, turn-on field of the film prepared by magnetic field or electric field was reduced from 12.75 V/μm to 11.5 V/μm and 9 V/μm, respectively, sharp-pointed morphology, high content of graphite phase, lowest turn-on field (5.65 V/μm) the best field emission properties could be obtained provided with etching effects of electromagnetic coupling field. Various films can be prepared in the mode of external field (electric field, magnetic field and electromagnetic coupling field)-assisted HFCVD. The electromagnetic coupling field at high concentration of methanecan not only improve content of graphite phase, but also obtain the surface morphology of high aspect ratio, and therefore effectively improve the field emission properties of films.