目的 研究离子源功率对a-C:H(Al)薄膜结构及性能的影响。方法 采用阳极离子源离化CH4气体，中频磁控溅射Al靶，通过改变离子源功率，在n(100)型单晶硅及16MnCr5钢基体上沉积a-C:H(Al)薄膜。利用扫描电镜、维氏显微硬度计、摩擦磨损试验机和表面轮廓仪等设备对a-C:H(Al)薄膜的结构及性能进行表征。结果 薄膜的硬度均在1000HV以上。摩擦系数较低，为0.05～0.15。离子源功率为450 W时，薄膜摩擦系数和结合力均出现了最优值，分别为0.05和21.46 N。离子源功率在550 W时，磨损率达到最低值，为3.59×10?7 mm3/(N?m)。结论 离子源功率较低时，薄膜表面较疏松，随着离子源功率的增加，薄膜逐渐趋于平整致密。随离子源功率的增加，薄膜的硬度增大，薄膜的结合力先增大后减小，而薄膜的摩擦系数先减小后增大，磨损宽度减小，磨损深度降低，磨损率减小。

The work aimed to study influence of ion source power on structure and properties of a-C:H(Al) films. a-C:H(Al) films were deposited on n(100) type monocrystalline silicon and 16MnCr5 steel substrates by changing ion source power, ionizing CH4 gas with anode-layer ion source and magnetron sputtering Al target at intermediate frequency. Structure and properties of a-C:H(Al) films were systematically characterized with SEM, micro vickers tester, friction and wear tester, surface profiler, etc. Hardness values of the films were over 1000HV, and friction coefficient was as low as 0.05～0.15. At the power of ion resource of 450 W, the films exhibited the optimal friction coefficient and adhesion of 0.05 and 21.46 N, respectively. At the power of ion resource of 550 W, wear rate of the films was the minimum, only 3.59×10－7mm3/(N?m). The film surface was loose when the power of ion source was low, and tended to be smooth and compact as the ion source power increased. As the ion source power increased, hardness values of the films increased, while, adhesion of the films first increased and then decreased, friction coefficient first decreased and then increased while wear width, wear depth and wear rate of the films reduced.