目的 设计单晶蓝宝石衬底化学机械抛光的合理方案，探究主要抛光工艺参数对抛光衬底的表面质量和材料去除率的影响，并得到一组材料去除率高且表面质量满足要求的抛光工艺参数。方法 借助原子力显微镜和精密天平分别对衬底表面形貌和材料去除率进行分析，采用单因素实验法探究了抛光粒子、抛光时间、抛光压力和抛光盘转速对蓝宝石衬底化学机械抛光的表面质量和材料去除率的影响，并设计合理的交互正交优化实验寻求一组较优的抛光工艺参数。结果 在蓝宝石衬底化学机械精抛过程中，在抛光时间为0.5 h、抛光压力为45.09 kPa、抛光盘转速为50 r/min、SiO2抛光液粒子质量分数为15%、抛光液流量为 60 mL/min的条件下，蓝宝石衬底材料的去除率达41.89 nm/min，表面粗糙度降低至0.342 nm，衬底表面台阶结构清晰，满足后续外延工序的要求。结论 采用化学机械抛光技术和优化的工艺参数，可同时获得较高的材料去除率和高质量的蓝宝石衬底表面。

The work aims to explore effects of main chemical mechanical polishing (CMP) process parameters on the material removal rate (MRR) and surface quality of single crystal sapphire substrate and obtain a group of polishing process parameters of high MMR and better surface quality by designing reasonable plans. Atomic force microscope (AFM) and precision balances were used to analyze the morphology and MMR of sapphire substrate respectively. The effects of polishing particle, polishing time, polishing pressure and polishing disk revolution on MRR and surface quality were studied by performing single factor experiments. Proper interactive orthogonal optimal experiments were designed to find a group of optimized process parameters. During the final CMP process of single crystal sapphire substrate, provided with polishing time of 0.5 h, polishing pressure of 45.09 kPa, rotational speeds of 50 r/min, SiO2 slurry particle mass fraction of 15% and polishing slurry flow rate of 60 mL/min, MMR of the sapphire substrate wafer was up to 41.89 nm/min, surface roughness decreased to 0.342 nm and atomic step-terrace structure was clear, meeting the requirements of subsequent epitaxy process. Both high MMR and better surface quality can be obtained at the same time by adopting chemico-mechanical polishing technology and optimal process parameters.