目的 为了解决超大规模电路高度集成所引起的RC延迟、信号串扰、能耗及噪声等一系列问题，制备具有低介电常数的聚酰亚胺/氟化石墨烯复合薄膜。方法 分别采用液相剥离法和两步法制备了氟化石墨烯溶液和聚酰胺酸前驱体溶液，通过溶液共混法制备聚酰亚胺/氟化石墨烯复合薄膜，并通过透射电镜、红外光谱仪、X射线衍射仪以及精密阻抗分析仪，对氟化石墨烯、聚酰亚胺及聚酰亚胺/氟化石墨烯复合薄膜的微观结构和介电性能进行表征研究。结果 氟化石墨烯和聚酰亚胺成功复合得到了聚酰亚胺/氟化石墨烯复合薄膜，且复合薄膜的介电常数由3.63降到了2.52。结论 成功制备了低介电常数的聚酰亚胺/氟化石墨烯复合薄膜。

The work aims to solve the RC delay, signal crosstalk, power consumption, noise and other issues caused by the high integration of super-large scale integrated circuits and prepare polyimide/fluorinated ?lms of low dielectric constant. Fluorinated graphene solution and polyamide acid solution were prepared by simple sonochemical exfoliation method and two-step method. The PI/FG composite films were prepared by solution blending method, while microstructure and dielectric properties of FG, PI and PI/FG composite films were characterized by transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and precision impedance analyzer. The polyimide/fluorinated films were successfully prepared and the dielectric constant of composite film decreased from 3.63 to 2.52. The polyimide/fluorinated grapheme composite films of low dielectric constant are successfully prepared.