| ZHONG Li,JIN Fan-ya,DAN Min,TONG Hong-hui,JING Xing,WANG Xin-chao,XU Ze-jin.Effect of Surface Treatment on Cu Metallization by Magnetron Sputtering of PEEK GF30[J],51(7):297-305 |
| Effect of Surface Treatment on Cu Metallization by Magnetron Sputtering of PEEK GF30 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2022.07.029 |
| KeyWord:magnetron sputtering coating surface metallization interface treatment implantation activation PEEK bond strength |
| Author | Institution |
| ZHONG Li |
Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu , China |
| JIN Fan-ya |
Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu , China |
| DAN Min |
Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu , China |
| TONG Hong-hui |
Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu , China |
| JING Xing |
Nuclear Power Institute of China, Chengdu , China |
| WANG Xin-chao |
Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu , China |
| XU Ze-jin |
Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu , China |
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| Abstract: |
| To impart good electrical conductivity to the substrate PEEK GF30, Cu films were deposited on the surface by magnetron sputtering coating technology. Metal ion implantation and plasma activation technology were used to improvement of surface properties of substrate, and the properties of the interface after interface processing were compared with those of the original substrate by contact angle testing, infrared spectroscopy and microscopic morphology observation. On this basis, we deposited copper films by magnetron sputtering method and explored the factors affecting the interfacial state and the mechanism of the effect on the bonding performance by testing and comparing the phase structure, surface morphology and composition, and the bonding strength of the films deposited on three different interfacial states. The results showed that Ti content on the surface was effectively improved after metallic ion implantation while the surface wettability did not change significantly, and surface wettability and the interfacial state was greatly improved after the activation treatment. The Cu films prepared at three different interfacial states all grew along Cu(225) selectively, and the crystallinity of the film after plasma activation treatment was optimal. The film prepared in the original state had poor flatness and interfacial connection properties, the coating adhesion was maintained at level 5 and the bonding force was <0.1 N. The film prepared after implantation was flat and dense, with Ti particles at the junction producing an "anchoring" reinforcement effect, and the adhesion of the coating was maintained at level 1, with a bonding force of <0.1 N. The film prepared after activation was regular and uniform, with a buffer layer at the junction, and the depth and strength of metal particles "anchoring" was optimal, and the coating adhesion was maintained at level 0, with a bonding force of 15.45 N. Metal ion implantation can improve the film base bonding strength, but the improvement effect is limited by the depth of the implanted layer, while plasma activation treatment can increase the surface activity and improve the surface environment of the substrate, which can effectively improve the film base bonding strength. |
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