| DU Ling-ling,ZHOU Xi-ying,LI Xiao,ZHOU Wen-hua,FAN Zhi-jun.Effects of Sn Doping on Crystallization Behavior of SixSb100–x Phase Change Films[J],50(9):169-175 |
| Effects of Sn Doping on Crystallization Behavior of SixSb100–x Phase Change Films |
| Received:December 08, 2020 Revised:April 01, 2021 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2021.09.017 |
| KeyWord::Structural features of Ge1Sb4Te7, an intermetallic compound in the GeTe-Sb2Te3 homologous series[J]. ChemInform, 2008, 39(50):255-259. |
| Author | Institution |
| DU Ling-ling |
Shanghai University of Engineering Science, Shanghai , China |
| ZHOU Xi-ying |
Shanghai University of Engineering Science, Shanghai , China |
| LI Xiao |
Shanghai University of Engineering Science, Shanghai , China |
| ZHOU Wen-hua |
Shanghai University of Engineering Science, Shanghai , China |
| FAN Zhi-jun |
Shanghai University of Engineering Science, Shanghai , China |
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| Abstract: |
| To improve the crystallization temperature, thermal stability and phase transition velocity of SixSb100–x phase change films by doping different contents of Sn. Finally, an environmentally friendly Te free phase change films was obtained. SixSb100–x phase change films doped with Sn were prepared by three-target magnetron sputtering method, and resistor-temperature data and resistance data at different temperature rates were obtained by vacuum four-probe test system, so as to calculate 10-year data retention force and crystallization activation energy by Arrhenius formula and Kissinger formula. The composition, structure and surface morphology of the films were analyzed by EDS, XRD and AFM. When the Sn doping was 2at%, the change of resistance with temperature was analyzed, the crystallization temperature increased from 199 ℃ to 219 ℃, the crystallization activation energy increased from 3.879 eV to 4.390 eV, and the data retention force increased from 122 ℃ to 144 ℃ for ten years, showing good crystalline/amorphous thermal stability; The microstructure before and after annealing is analyzed, and the grain size is reduced to 20 nm, which produces more grain boundaries, which is helpful to enhance electron scattering and thus produce higher resistance; By analyzing the surface morphology, the Sn doping makes the crystallization mechanism of the thin film mainly transform from the nucleating type to the growing type, which is conducive to improving the phase transition speed. A small amount of Sn doped SixSb100–x phase change films has a higher crystallization temperature, greater crystallization activation energy, higher resistance and good ten-year data retention; Excessive Sn doping makes the grain size of SixSb100–x phase change films larger, which is not conducive to the optimization of the properties of SixSb100–x films. |
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