MA Xin,ZHANG Qi,GUO Peng,TONG Xiao-shan,ZHAO Yu-long,WANG Ai-ying.MEMS Pressure Sensor Based on Piezoresistive Effect of Amorphous Carbon Film[J],49(6):60-67
MEMS Pressure Sensor Based on Piezoresistive Effect of Amorphous Carbon Film
Received:April 22, 2020  Revised:June 20, 2020
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DOI:10.16490/j.cnki.issn.1001-3660.2020.06.007
KeyWord:amorphous carbon film  piezoresistive effect  piezoresistive mechanism  MEMS  pressure sensor  thick film theory
                 
AuthorInstitution
MA Xin 1.a.School of Mechanical Engineering, b.State Key Laboratory for Manufacturing System Engineering, Xi′an Jiaotong University, Xi′an , China
ZHANG Qi 1.a.School of Mechanical Engineering, b.State Key Laboratory for Manufacturing System Engineering, Xi′an Jiaotong University, Xi′an , China
GUO Peng 2.a.Key Laboratory of Marine Materials and Related Technologies, b.Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo , China
TONG Xiao-shan 1.a.School of Mechanical Engineering, b.State Key Laboratory for Manufacturing System Engineering, Xi′an Jiaotong University, Xi′an , China
ZHAO Yu-long 1.a.School of Mechanical Engineering, b.State Key Laboratory for Manufacturing System Engineering, Xi′an Jiaotong University, Xi′an , China
WANG Ai-ying 2.a.Key Laboratory of Marine Materials and Related Technologies, b.Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo , China; 3.Research Center of Materials and Photoelectricity, University of Chinese Academy of Sciences, Beijing , China
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Abstract:
      The paper aims to study the piezoresistive performance and mechanism of amorphous carbon (a-C) film and apply it in the sensitive circuit of micro-electromechanical system (MEMS) pressure sensor. In this paper, the a-C film piezoresistive material was deposited by direct-current (DC) sputtering process. The phase content and the electrical, mechanical and thermal performance of the representative sample were characterized. Then the device was designed by finite element simulation. And the a-C carbon film pressure sensor was successfully fabricated by MEMS processes to carry out test and analysis of device level. The sensitivity of the pressure sensor chip was 9.4 μV/kPa and the non-linearity of output signal was 5.57% FS (full scale) in the range of 0 to1 MPa. The change of the a-C film resistor’s resistance showed linear relation at –70 to 150 ℃. Especially at –20 to 150 ℃, that relation was stronger, which showed that the temperature compensation for the a-C piezoresistive material was easier in high temperature environment. The phase content varied along the thickness-direction of the film, which implied this direction was also needed to be considered in the mechanism research. In conclusion, the a-C carbon film can be well-combined with the traditional MEMS sensor chip in terms of fabrication process, and mechanical and electrical properties. Finally, the a-C piezoresistive pressure sensor also shows satisfactory sensitivity and linearity Furthermore, the thickness-direction of a-C film should be added into the mechanism research.
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