| ZHANG Man,ZHANG Qi-kai,ZOU Lan-mei,SUO Shi-xing,YU Shao-ming.Stability of α-Al2O3 Nanoparticles Polishing Slurry and Its Effect on Polishing Performance of Sapphire[J],49(2):331-338 |
| Stability of α-Al2O3 Nanoparticles Polishing Slurry and Its Effect on Polishing Performance of Sapphire |
| Received:May 07, 2019 Revised:February 20, 2020 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2020.02.042 |
| KeyWord:α-Al2O3 polishing slurry dispersion stability chemical mechanical polishing sapphire |
| Author | Institution |
| ZHANG Man |
1.School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei , China |
| ZHANG Qi-kai |
1.School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei , China |
| ZOU Lan-mei |
1.School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei , China |
| SUO Shi-xing |
2.Zibo Jinjiyuan Abrasive Co. Ltd, Zibo , China |
| YU Shao-ming |
1.School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei , China |
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| Abstract: |
| The paper aims to prepare Al2O3 nanoparticles polishing slurry of good dispersion stability to improve the chemical and mechanical polishing performance of sapphire. The polishing slurry of α-Al2O3 nanoparticles was prepared by dispersing α-Al2O3 in different dispersion media such as silica sol, cerium oxide sol and water of different pH values, silica sol concentrations and silica sol particle size, to investigate the stability of polishing slurry and the effect of polishing slurry on the chemical and mechanical polishing performance of sapphire. The potential of α-Al2O3 was measured with a Zeta potentiometer to analyze the dispersion stability of slurry. The surface roughness (Ra) and material removal rate (MRR) of sapphire were evaluated by atomic force microscopy (AFM) and dynamic balance, respectively. When silica sol was used as the dispersion medium, the stability of the polishing slurry and the polishing performance of sapphire were good. When the pH value of the polishing slurry was 10, it had good dispersion stability, and the chemical corrosion and mechanical grinding reached a dynamic balance. The polishing slurry had good polishing performance for sapphire. As the concentration of α-Al2O3 increased, the polishing performance of the polishing slurry increased first and then decreased. When the mass fraction of α-Al2O3 was 10.0%, the polishing slurry had good polishing performance to sapphire; when the mass fraction of silica sol was 0.02%, the dispersion stability of the polishing slurry and the polishing performance to sapphire were good. As the particle size of the silica sol increased, the stability of the polishing slurry and the polishing performance to sapphire gradually deteriorated, so a silica sol with the minimum particle diameter of 5 nm was selected as a dispersion medium. In other words, the polishing slurry under the conditions of 10.0% α-Al2O3 and 0.02 % silica sol with a particle diameter of 5 nm, and a pH value of 10, etc., had good stability. The slurry had a material removal rate of 15.16 nm/min for sapphire polishing and a surface roughness of 0.272 nm, satisfying the requirements on subsequent epitaxial process of sapphire. The silica sol of suitable concentration can significantly improve the dispersion stability of α-Al2O3 polishing slurry. Its dispersion effect is obviously superior to that of water or cerium oxide sol as a dispersion medium. The polishing performance of sapphire is significantly improved. |
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