| ZHANG Zhe,ZHAO Jiang-he,ZHANG Ming,XIONG Qing-yun,XIONG Jin-ping.Research Progress of Chemical Etching on the Surface of GaSb Semiconductor Material[J],48(1):114-125 |
| Research Progress of Chemical Etching on the Surface of GaSb Semiconductor Material |
| Received:September 18, 2018 Revised:January 20, 2019 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2019.01.015 |
| KeyWord:GaSb semiconductor material chemical etching wet etching etching system etching rate etching composition |
| Author | Institution |
| ZHANG Zhe |
Beijing University of Chemical Technology, Beijing , China |
| ZHAO Jiang-he |
Beijing University of Chemical Technology, Beijing , China |
| ZHANG Ming |
Beijing University of Chemical Technology, Beijing , China |
| XIONG Qing-yun |
Beijing University of Chemical Technology, Beijing , China |
| XIONG Jin-ping |
Beijing University of Chemical Technology, Beijing , China |
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| Abstract: |
| Improving the wet chemical etching rate on GaSb surface and adjusting the etched surface morphology are of great significance to enhance the performance of antimonide laser devices. Therefore, the work summarized the etching rate and surface morphology of all kinds of corrosive liquid etching GaSb materials and the latest researches on chemical etching of GaSb semiconductor materials. The inorganic acid etching system, organic acid etching system and mixed acid etching system were mainly investigated, the etching rate and the etched surface morphology of each etching system were compared, the advantages and disadvantages of each etching system and further research direction were pointed out, and the roles of main components in each etching system were summarized. H2O2, HNO3, I2, Br2 and KMnO4 were main oxidants used in GaSb chemical etching liquid. Complexing agent (or dissolving agent) mainly consisted of tartaric acid, HF, HCl, citric acid, etc. Buffer (or thinner) included HAc, H2O, etc. The etching rate of hydrochloric acid, hydrogen peroxide and inorganic acid was moderate, and the etching surface was relatively smooth. The etching solution composed of nitric acid and hydrofluoric acid had the advantage of rapid corrosion rate, so the etching effect could be improved by adding organic acid or buffer, and the development prospect was great. The phosphoric acid system had the advantages of flat surface after etching and little effect of downward cutting, but it also had the disadvantages of slow etching and rough surface after etching. The surface of sulfuric acid system was rough after etching and not suitable for GaSb wet etching. Single organic acids and alkaline systems had a slow etching rate, but due to strong etching selectivity, they were widely used in the selective etching of GaSb based materials. On the whole, etching system composed of inorganic acids and organic acid was better to improve the etching rate and surface morphology of GaSb material and all the etching systems had problems such as weak adjustable etching rate，uncontrollable surface quality and poor etching repeatability. Therefore, the work summarizes a variety of research ideas to improve the wet chemical etching GaSb materials, and looks forward to the future development direction of GaSb materials wet etching. |
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