GONG Yao-ting.Structure and Electrical Properties of N-doped Nanocrytalline Diamond Films[J],47(7):179-184
Structure and Electrical Properties of N-doped Nanocrytalline Diamond Films
Received:February 11, 2018  Revised:July 20, 2018
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DOI:10.16490/j.cnki.issn.1001-3660.2018.07.025
KeyWord:N-doping  nanocrystalline diamond film  grain size  electrical properties
  
AuthorInstitution
GONG Yao-ting The College of Post and Telecommunication of WIT, Wuhan , China
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Abstract:
      The work aims to study effects of different nitrogen concentration on structure and electrical properties of N-doped nano-crystalline diamond (NCD) films. Single crystal silicon was used as substrate and N-doped NCD films were deposited in MPCVD method in N2-CH4-H2 gas system. Surface morphology of the deposited films was characterized by SEM. Quality of the NCD films was characterized by Raman spectra, N atom configuration of the deposited NCD films was studied based upon X-ray diffraction, and electrical properties of the NCD films were characterized by electrochemical workstation. Average length of the linear NCD decreased as N2 concentration increased, and the linear NCD transformed into aggregated NCD grains at the N2 concentration of 90%. H2 concentration decreased, and sp2 content first increased and then decreased as N2 concentration increased. Grain size of the NCD films first decreased and then increased, and reached the minimum (12.6 nm) at the N2 concentration of 85%. According to the electrical test results, surface resistance of the NCD films first decreased and then increased as the N2 concentration increased, and reached the minimum (9.2 Ω) at the N2 concentration of 85%. XPS high resolution N1s results showed that variation trend of conductive pyridinic-N was opposite to that of conductive pyrrolic-N as N2 concentration increased. Electric properties of NCD films are mainly affected by average grain size of the films. The decrease of grain size leads to increase of crystal boundary content and electrical properties, and the increase of grain size leads to decrease of crystal boundary content and electrical properties.
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