| GUO Ting,ZUO Xiao,GUO Peng,LI Xiao-wei,WU Xiao-chun,XIE Shi-fang,WANG Ai-ying.Effect of Etching Process on Growth and Properties of Tetrahedral Amorphous Carbon Film[J],46(4):143-149 |
| Effect of Etching Process on Growth and Properties of Tetrahedral Amorphous Carbon Film |
| Received:December 01, 2016 Revised:April 20, 2017 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2017.04.024 |
| KeyWord:tetrahedral amorphous carbon film glow etching arc etching etching time structure |
| Author | Institution |
| GUO Ting |
1.School of Materials Science and Engineering, Shanghai University, Shanghai , China; 2. a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo , China |
| ZUO Xiao |
a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo , China |
| GUO Peng |
a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo , China |
| LI Xiao-wei |
a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo , China |
| WU Xiao-chun |
School of Materials Science and Engineering, Shanghai University, Shanghai , China |
| XIE Shi-fang |
Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang , China |
| WANG Ai-ying |
a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo , China |
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| Abstract: |
| The work aims to study effects of different plasma etching processes on silicon substrate and tetrahedral amorphous carbon (ta-C) films, and further survey effects of different arc plasma etching time on ta-C films. Etching of different plasma and deposition of ta-C films were performed by a home-made 45º bend magnetic filtered cathodic vacuum arc (FCVA) coater. Plasma types and density were characterized with optical emission spectrometer (OES); thickness of ta-C films with ellipsometer; roughness of treated substrates after etching with atomic force microscope (AFM); the film structure with Raman spectroscopy and XPS; and film-to-substrate interface structure was analyzed with TEM, representatively. The results showed that the Ar+ of low density dominated in the effective plasma of glow etching process while Ar+ of high density and a few C+ emerged in arc plasma etching process. After the arc plasma etching, a nearly 15 nm thick interface layer was formed on the substrates surface, and pre-deposition of amorphous carbon film (a-C) was observed. Moreover, sp3 content of the ta-C film decreased as the arc etching time increased. Compared with glow etching process, arc etching facilitates the deposition of thicker ta-C films, primarily due to the formation of interfacial layer on the substrate surface and the pre-deposition of amorphous carbon films layer in arc etching, which contributes to formation of a special a-C/ta-C gradient film structure and improvement of adhesion strength. |
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