| XIONG Li-wei,PENG Huan-yang,WANG Jian-hua,CUI Xiao-hui,GONG Guo-hua.Preparation of High Oriented Diamond Films[J],45(11):10-15 |
| Preparation of High Oriented Diamond Films |
| Received:March 23, 2016 Revised:November 20, 2016 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2016.11.002 |
| KeyWord:MPECVD methane volume fraction nitrogen flow rate high oriented diamond film surface morphology |
| Author | Institution |
| XIONG Li-wei |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| PENG Huan-yang |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| WANG Jian-hua |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| CUI Xiao-hui |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| GONG Guo-hua |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
|
| Hits: |
| Download times: |
| Abstract: |
| The work aims to study the effects of different volume fractions of methane and nitrogen flow rate on diamond (111) and (100) planes, so as to prepare high oriented diamond films under optimal conditions. High oriented diamond films with (111) and (100) planes were prepared by using microwave plasma enhanced chemical vapor phase deposition (MPECVD) method. The previous group （1#—3#） took CH4/H2 as air source before experiment and the latter group （4#—5#） took CH4/H2/N2 gas as air source after experiment. Growth morphology, grain size and crystalline diamond surface characteristic peak intensity of (111) plane at different methane volume fractions and (100) plane at different nitrogen flow rates were analyzed by using SEM and XRD. Meanwhile, Raman test was conducted to change variation trend of diamond characteristic peaks and graphitic peaks at different methane volume fractions and nitrogen flow process. With the increase of methane volume fractions, the diamond (111) plane becomes visible in the former group When the low volume of methane concentration was 2%, the diamond surface was seriously etched by H plasma, little rough (111) plane was formed. When the methane volume fraction amounted to 4.5%, (111) plane growth was very uniform and the diamond was of high quality. As the methane volume fraction was further increased, non-diamond content of the film increased while diamond quality declined. For the latter group, as the nitrogen flow rate increased, diamond (100) plane growth was very smooth and tidy. At a low nitrogen flow rate of 5 cm3/min, (100) plane was relatively rough and the growth rate was accelerated since the added nitrogen containing groups were included. As the nitrogen flow rate was further increased to 10 cm3/min, the whole (100) plane was promoted to occupy the entire interface and growth of other crystal planes were weakened as a result of preferred growth of nitrogenous groups. For the previous group, the (111) plane occupies the entire growth plane with uniform growth and the characteristic peak of diamond (111) plane under XRD test amouts to the maximum as well when the methane volume fraction is 4.5%. For the latter group, surface smoothness and evenness are the best at the nitrogen flow rate of 10 cm3/min. |
| Close |
|
|
|