| HU Dong-ping,WANG Xiao-long,TANG Li.Influence of Base Pressure on Electrical Resistance of NiCr Films Deposited by Magnetron Sputtering[J],45(7):143-149 |
| Influence of Base Pressure on Electrical Resistance of NiCr Films Deposited by Magnetron Sputtering |
| Received:March 03, 2016 Revised:July 20, 2016 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2016.07.024 |
| KeyWord:Ni-Cr alloy thin films magnetron sputter base pressure resistivity heat treated |
| Author | Institution |
| HU Dong-ping |
Inst System Eng, China Acad Engn Phys, Mianyang , China |
| WANG Xiao-long |
Inst System Eng, China Acad Engn Phys, Mianyang , China |
| TANG Li |
Inst System Eng, China Acad Engn Phys, Mianyang , China |
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| Abstract: |
| Objective NiCr alloy thin films are commonly deposited by the magnetron sputtering and the base pressure is one of the important process parameters. The influence of the base pressure on the electrical resistance of Ni-Cr alloy films was studied. Methods Thin films of various thicknesses were deposited at different sputtering time, thin films were deposited atdifferent vacuum-pumping time of 4 h, 6 h, 8 h, 10 h, the electrical resistance of them was tested. Thin films deposited at the same process were heat treated in different atmospheres and the electrical resistance of them was tested. Results The relationship between the electrical resistance and the thickness of NiCr alloy thin films was nonlinear. The electrical resistance of the films decreased with the vacuum time increasing. The transformation tendency of the electrical resistance of the films heat treated in air or in vacuum was consistent. While that heat treated in nitrogen was opposite. Conclusion The experimental results indicated that the electrical resistivity of Ni-Cr alloy films was influenced by the gas residues in vacuum environment of the base pressure, and the main reason for it was the oxidation reaction of the films. The electrical resistivity of Ni-Cr alloy films would be in asymptotic stability after the 9 h vacuum-pumping and the 110 min target sputtering. |
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