| ZHANG Guang-yao,GAO Yuan,ZHANG Yan,WANG Cheng-lei,WEI Wen-zhu,LU Xiao-hui.Effect of Magnetron Sputtering Power on the Structure and Properties of Deposition W on the Surface of Lead Frames[J],43(6):33-36,63 |
| Effect of Magnetron Sputtering Power on the Structure and Properties of Deposition W on the Surface of Lead Frames |
| Received:July 08, 2014 Revised:December 10, 2014 |
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| DOI： |
| KeyWord:magnetron sputtering film tungsten conductivity binding force |
| Author | Institution |
| ZHANG Guang-yao |
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin , China |
| GAO Yuan |
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin , China |
| ZHANG Yan |
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin , China |
| WANG Cheng-lei |
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin , China |
| WEI Wen-zhu |
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin , China |
| LU Xiao-hui |
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin , China |
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| Abstract: |
| Objective To study the technology and properties of depositing metal W film on the surface of iron-based lead frames, which had been deposited with Cu. Methods Tungsten films layer was prepared by vacuum magnetron sputtering deposition technique, and then the structure and properties of the deposited layers were analyzed by SEM, EDS, XRD and other techniques. Results Under certain operating conditions of pressure, temperature and deposition time, the thickness of tungsten deposition layers increased with the increase of sputtering power, but the increase was nonlinear. The film thickness uniformity of the deposited layer was good, with dense structure and strong binding force with the substrate. The deposited layer films by magnetron sputtering W had low impurity content and stable chemical composition, the deposition process W atoms preferred growth along the (110) crystal plane, and there was deviation in XRD peaks. The tungsten deposition layers had good electrical conductivity, its resistivity was less than 1. 5×10 -6 Ω·m, and the resistance temperature coefficient was less than 0. 0052 / ℃ . Tungsten deposition layer had good oxidation resistance, oxide layer did not occur after 8-hour baking at 180 ℃ . Conclusion Depositing metal tungsten on the surface of the lead frames resulted in uniform and dense films, with good adhesion, conductivity and oxidation resistance. |
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