| LEI Tian-yu,SUN Yuan-yang,REN Hong,ZHANG Yu,CAI Wei,FU Chun-lin.Research Progress in the Sol-Gel Preparation and Electrical Properties of Bismuth Ferrite Thin Films[J],43(3):129-136,174 |
| Research Progress in the Sol-Gel Preparation and Electrical Properties of Bismuth Ferrite Thin Films |
| Received:December 16, 2013 Revised:February 28, 2014 |
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| DOI： |
| KeyWord:bismuth ferrite thin film sol-gel method electrical properties |
| Author | Institution |
| LEI Tian-yu |
Chongqing University of Science and Technology, Chongqing , China |
| SUN Yuan-yang |
Chongqing University of Science and Technology, Chongqing , China |
| REN Hong |
Chongqing University of Science and Technology, Chongqing , China |
| ZHANG Yu |
Chongqing University of Science and Technology, Chongqing , China |
| CAI Wei |
Chongqing University of Science and Technology, Chongqing , China |
| FU Chun-lin |
Chongqing University of Science and Technology, Chongqing , China |
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| Abstract: |
| Bismuth ferrite is the only single-phase multiferroic material at room temperature. BFO materials received extensive attention because of its high ferroelectric Curie temperature, large remnant polarization, narrow band gap and multiferroic property. sol-gel method is a common method for preparation of bismuth ferrite thin film. The research progress in the effects of process parameters ( such as precursor solution, annealing temperature, annealing atmosphere, bottom electrode) and dopants on the electrical properties of bismuth ferrite thin films was reviewed. The reasons that different preparation processes led to distinct electrical properties of BFO thin films were analyzed. The superior preparation conditions of BFO thin films via sol-gel were summarized. Finally, some problems to be solved were put forward. |
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