| XIONG Wei,CHU Xiang-feng,BAI Lin-shan,DONG Yong-ping,YE Ming-fu.Research Progress of Chemical Mechanical Polishing of Substrates Used[J],43(1):125-130 |
| Research Progress of Chemical Mechanical Polishing of Substrates Used |
| Received:October 14, 2013 Revised:November 22, 2013 |
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| DOI： |
| KeyWord:substrate materials chemical mechanical polishing polishing process polishing slurry |
| Author | Institution |
| XIONG Wei |
School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan , China |
| CHU Xiang-feng |
School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan , China |
| BAI Lin-shan |
School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan , China |
| DONG Yong-ping |
School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan , China |
| YE Ming-fu |
School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan , China |
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| Abstract: |
| In this paper, the mechanism of chemical mechanical polishing ( CMP ) was summarized. The development of chemical mechanical polishing of three kinds of substrates ( α-Al2O3, SiC, Si) were introduced. The study was mainly focused on the effects of the polishing process parameters and the composition of the polishing slurry ( different abrasive, abrasive particle size, oxidizing agent, chelating agent and pH value, etc) on wafer polishing, and the existing problems of CMP were pointed out. Finally,the future prospect of CMP of LED substrate was outlined. |
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