ZHAO Qi,DAI Ming-jiang,WEI Chun-bei,QIU Wan-qi,HOU Hui-jun,TAN Di.Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition[J],42(5):19-23 |
Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition |
Received:May 25, 2013 Revised:June 18, 2013 |
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KeyWord:diamond films titanium interlayer internal stress hot filaments chemical vapor deposition |
Author | Institution |
ZHAO Qi |
Guangzhou Research Institute of Non-ferrous Metals, Guangzhou , China;School of Materials Science and Engineering, South China University of Technology, Guangzhou , China |
DAI Ming-jiang |
Guangzhou Research Institute of Non-ferrous Metals, Guangzhou , China |
WEI Chun-bei |
Guangzhou Research Institute of Non-ferrous Metals, Guangzhou , China |
QIU Wan-qi |
School of Materials Science and Engineering, South China University of Technology, Guangzhou , China |
HOU Hui-jun |
Guangzhou Research Institute of Non-ferrous Metals, Guangzhou , China |
TAN Di |
Guangzhou Research Institute of Non-ferrous Metals, Guangzhou , China |
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Abstract: |
Diamond films were deposited on metal copper substrate with a buffer layer of titanium with the mixture gas of methane and hydrogen by hot filaments chemical vapor deposition ( HFCVD) . Effects of different thickness of titanium layer on diamond films by HFCVD were investigated. The components of films were investigated using X-ray diffraction ( XRD) and laser Raman spectrum, and the surface morphology and structure were observed by scanning electron microscopy ( SEM) . The surface element of samples processed by heat treatment were analyzed using energy disperse spectroscopy ( EDS ) . The results show that when the thickness of titanium layer is 3 μm, the diamond film breaks down due to large internal stress. When the thickness of titanium increases to 25 μm, the diamond film is good and don爷 t break down with the existence of internal stress in the membrane. The diffusion between copper and titanium happens when the sample is processed by heat treating at 850 ℃ for |
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