| WANG Min,GUO Hui-yong,ZHANG Guo-ge,LI Wen-fang.Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation[J],42(4):35-38 |
| Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation |
| Received:February 27, 2013 Revised:April 02, 2013 |
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| DOI： |
| KeyWord:Ba0.5Sr0.5TiO3 ferroelectric films microarc oxidation dielectric property |
| Author | Institution |
| WANG Min |
College of Mechanical Engineering, Guangdong Polytechnic Normal University,Guangzhou China |
| GUO Hui-yong |
Pinggao Group Company Limited, Pingdingshan ,China |
| ZHANG Guo-ge |
School of Material and Engineering, South China University, Guangzhou China |
| LI Wen-fang |
School of Material and Engineering, South China University, Guangzhou China |
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| Abstract: |
| Ba0.5Sr0.5TiO3thin films were conducted by microarc oxidation and placing titanium plates as anode in 0 . 2 mol / L barium hydroxide & 0 . 2 mol / L strontium hydroxide aqueous solution. Phase composition, elements distribution, cross section structure and dielectric properties of the films were characterized. The results show that the films are composed mainly of tetragonal Ba0.5Sr0.5TiO3phases. The distribution of Ba, Sr , Ti, and O element is uniform in dense layer in addition to micropore area. The film has excellent dielectric property, in the frequency of 1 kHz dielectric constant value is 411 . 3 . At last, the formation process of ferroelectric films deposited by microarc oxidation was analyzed, possible chemical reactions of the film's growth were suggested. |
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