SUN Yue-feng,ZHANG Wei-jia,SONG Deng-yuan,LIU Jia,ZHANG Lei,MA Qiang,WU Ran-song,ZHANG Leng.The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells[J],42(3):5-8
The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells
Received:January 26, 2013  Revised:March 01, 2013
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KeyWord:RF-PECVD  Boron-doped  phosphorus-doped  nanocrystalline silicon film  analogue tandem solar cell
                       
AuthorInstitution
SUN Yue-feng Beihang University, Beijing , China
ZHANG Wei-jia Beihang University, Beijing , China
SONG Deng-yuan YINGLI SOLAR, Baoding , China
LIU Jia Beihang University, Beijing , China
ZHANG Lei YINGLI SOLAR, Baoding , China
MA Qiang Beihang University, Beijing , China
WU Ran-song Beihang University, Beijing , China
ZHANG Leng Beihang University, Beijing , China
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Abstract:
      Boron-doped and phosphorus-doped thin films ( nc-Si : H) were deposited by RF-PECVD system and applied to fabricate analogue tandem solar cells. The optical performance and morphology of the thin film sample were analyzed. The results showed that the optical band gap, conductivity, hall mobility and carrier concentration of P-type nc-Si : H thin films were 2 . 189 eV, 8 . 01 S / cm, 0 . 521 cm2/ ( V·S) and 9 . 61 X1019/ cm3, respectively and those of N-type nc-Si : H thin films were 1 . 994 eV,1 . 93 S / cm, 1 . 694 cm2/ ( V·S) and 7 . 113 X1018/ cm3, respectively. Nanocrystalline grain size was approximate 3 ~5 nm and crystal volume fraction was within 35 % ~ 45 % . The grain deposition was density and it had more uniform size. The analogue tandem solar cells with the structure of Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H / i-nc-Si : H / n-c-Si / Al were prepared in an area of 20 mmX20 mm and achieved the maximum open-circuit voltage VOC, short-circuit current ISC and fill factor of 544 . 3 mV, 85 . 6 mA and 65 . 7 % , respectively.
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