SUN Yue-feng,ZHANG Wei-jia,SONG Deng-yuan,LIU Jia,ZHANG Lei,MA Qiang,WU Ran-song,ZHANG Leng.The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells[J],42(3):5-8 |
The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells |
Received:January 26, 2013 Revised:March 01, 2013 |
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KeyWord:RF-PECVD Boron-doped phosphorus-doped nanocrystalline silicon film analogue tandem solar cell |
Author | Institution |
SUN Yue-feng |
Beihang University, Beijing , China |
ZHANG Wei-jia |
Beihang University, Beijing , China |
SONG Deng-yuan |
YINGLI SOLAR, Baoding , China |
LIU Jia |
Beihang University, Beijing , China |
ZHANG Lei |
YINGLI SOLAR, Baoding , China |
MA Qiang |
Beihang University, Beijing , China |
WU Ran-song |
Beihang University, Beijing , China |
ZHANG Leng |
Beihang University, Beijing , China |
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Abstract: |
Boron-doped and phosphorus-doped thin films ( nc-Si : H) were deposited by RF-PECVD system and applied to fabricate analogue tandem solar cells. The optical performance and morphology of the thin film sample were analyzed. The results showed that the optical band gap, conductivity, hall mobility and carrier concentration of P-type nc-Si : H thin films were 2 . 189 eV, 8 . 01 S / cm, 0 . 521 cm2/ ( V·S) and 9 . 61 X1019/ cm3, respectively and those of N-type nc-Si : H thin films were 1 . 994 eV,1 . 93 S / cm, 1 . 694 cm2/ ( V·S) and 7 . 113 X1018/ cm3, respectively. Nanocrystalline grain size was approximate 3 ~5 nm and crystal volume fraction was within 35 % ~ 45 % . The grain deposition was density and it had more uniform size. The analogue tandem solar cells with the structure of Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H / i-nc-Si : H / n-c-Si / Al were prepared in an area of 20 mmX20 mm and achieved the maximum open-circuit voltage VOC, short-circuit current ISC and fill factor of 544 . 3 mV, 85 . 6 mA and 65 . 7 % , respectively. |
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