LI De-yu,XIA Guo-feng,ZHENG Zhen,WANG Zi-yu,TIAN Dong,WANG Chen,ZHAI Wen-jie,LI Ning.Research on the Copper Electrochemical Polishing in Phosphoric Acid[J],42(3):1-4,37
Research on the Copper Electrochemical Polishing in Phosphoric Acid
Received:December 12, 2012  Revised:January 26, 2013
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KeyWord:copper  phosphoric acid  electrochemical polishing  roughness  electrochemical impedance spectroscopy
                       
AuthorInstitution
LI De-yu Harbin Institute of Technology, Harbin , China
XIA Guo-feng Harbin Institute of Technology, Harbin , China
ZHENG Zhen Harbin Institute of Technology, Harbin , China
WANG Zi-yu Harbin Institute of Technology, Harbin , China
TIAN Dong Harbin Institute of Technology, Harbin , China
WANG Chen Harbin Institute of Technology, Harbin , China
ZHAI Wen-jie Harbin Institute of Technology, Harbin , China
LI Ning Harbin Institute of Technology, Harbin , China
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Abstract:
      The eletrochemical properties of Cu eletrochemical polishing in phophoric acid solutions has been studied by anodic polarization and electrochemical impedance spectroscopy ( EIS) technique. The roughness of Cu firstly decreased, and then increased with the concentration of H3PO4increased at 0 . 2 V, 0 . 4 V, 0 . 6 V and 0 . 8 V, and reached the minimum roughness value when the H3PO4concentration was 55 % . The Rs value at different potential, fitting results of EIS, suggested the change in the resistance of viscous phosphate and Cu oxide films. With the increase of phosphate concentration, the relaxation time of the first capacitive semicircle extended, and it mean the acceleration in the copper dissolution reaction.
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