GUO Ping,SUN Feng-mei,ZHANG Yuan,XIA Bing.Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires[J],(5):22-24
Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires
Received:May 18, 2012  Revised:October 20, 2012
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KeyWord:porous silicon  silicon nanowires  photovoltaic cells  anti-reflection effect
           
AuthorInstitution
GUO Ping Nanjing College of Information Technology, Nanjing , China
SUN Feng-mei Nanjing College of Information Technology, Nanjing , China
ZHANG Yuan Nanjing College of Information Technology, Nanjing , China
XIA Bing Nanjing Forestry University, Nanjing , China
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Abstract:
      By anode electrochemical etching or wet chemical etching, porous silicon and silicon nanowires were prepared, respectively. After oxidation by air plasma, these two samples were characterized by scanning electron microscope, infrared spectrum. Finally, the antireflection effect of porous silicon and silicon nanowires were measured, which indicated silicon nanowires had better anti-reflection effect.
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