| FAN Li-hong,WANG Chao-yong,LU Zhong-jie,GUAN Rui-hong,YAO Ning.Photoelectric Properties of ITO Thin Film Deposited by Energy Filtered DC Magnetron Sputtering at Low Temperature[J],(5):1-3 |
| Photoelectric Properties of ITO Thin Film Deposited by Energy Filtered DC Magnetron Sputtering at Low Temperature |
| Received:May 13, 2012 Revised:October 20, 2012 |
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| DOI： |
| KeyWord:ITO thin films energy filtering magnetron sputtering photoelectric properties |
| Author | Institution |
| FAN Li-hong |
Physical Engineering College, Zhengzhou University, Zhengzhou , China |
| WANG Chao-yong |
Physical Engineering College, Zhengzhou University, Zhengzhou , China |
| LU Zhong-jie |
Physical Engineering College, Zhengzhou University, Zhengzhou , China |
| GUAN Rui-hong |
Physical Engineering College, Zhengzhou University, Zhengzhou , China |
| YAO Ning |
Physical Engineering College, Zhengzhou University, Zhengzhou , China |
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| Abstract: |
| The indium tin oxide(ITO)thin films were deposited on glass substrates by energy filtering magnetron sputtering(EFMS)at low temperature. The effects of different filtering electrode mesh, sputtering power and the temperature of the substrates on the photoelectric properties of ITO films were studied. The results show that we can received the ITO thin films have a resistivity of 4.9×10-4 Ω·cm and transparency of 87% in the visible wavelength region, when the mesh of filtering electrode for 60 mesh, the temperature of the substrates for 81℃ and sputtering power for 165 W. |
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